IRLH5030TRPBF vs IRFH7084TRPBF 比較

詳細並排比較 IRLH5030TRPBF 由 Infineon 與 IRFH7084TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFH7084TRPBF IRFH7084TRPBF - 40V 100A N-Ch StrongIRFET PQFN | Infineon

IRFH7084TRPBF - 40V 100A N-Ch StrongIRFET PQFN | Infineon

IRFH7084TRPBF ✓ 啟用中

規格比較

參數 IRLH5030TRPBF IRFH7084TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRLH5030TRPBF —
FET Type N-Channel N-Channel
Technology IR MOSFET (HEXFET) StrongIRFET™ (trench MOSFET)
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TA=25C 13 A —
Continuous Drain Current (ID) at TC=25C 100 A —
On-Resistance RDS(on) max at VGS=10V 9 mOhm —
Total Gate Charge (Qg) 44 nC —
Gate Drive Voltage (optimized) 10 V (capable of 4.5 V) —
Power Dissipation at TA=25C 3.6 W —
Power Dissipation at TC=25C 156 W —
Thermal Resistance to PCB (RthJC) 0.8 C/W —
封裝 PQFN-8 (SuperSO8 5x6 mm) 8-PQFN 5x6 mm (SuperSO8)
Profile Height ≤ 0.9 mm —
安裝類型 Surface Mount Surface Mount
Qualification JEDEC standard —
Rg Tested 100% —
RoHS Compliance Compliant (Lead-free, Bromide-free, Halogen-free) —
Industry-Standard Pinout Yes —
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc=25°C, package-limited) — 100 A
Silicon-Limited Drain Current — 265 A
Power Dissipation (PD, Tc=25°C) — 156 W
On-Resistance RDS(on) max @ VGS=10V — 1.25 mΩ
On-Resistance RDS(on) typ @ VGS=10V — 0.95 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage VGS(th) typ — 1.7 V to 2.7 V
Input Capacitance (Ciss) max @ 25V — 6560 pF
工作溫度範圍 — -55°C to +175°C (TJ)
MSL 等級 — 1
RoHS 狀態 — Compliant
無鹵素 — Compliant
RthJC max — 0.96 °C/W (per datasheet)

資料表與資源

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