ISC110N12NM6ATMA1 vs BSC066N06NSATMA1 比較
詳細並排比較 ISC110N12NM6ATMA1 由 Infineon 與 BSC066N06NSATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISC110N12NM6ATMA1 | BSC066N06NSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 120 V | 60 V |
| Continuous Drain Current (ID) at Ta | 11 A | — |
| Continuous Drain Current (ID) at Tc | 62 A | — |
| On-Resistance RDS(on) max at VGS=10V | 9.8 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | ±20 V |
| Gate Threshold Voltage (VGS(th)) typ | 3.1 V | — |
| Total Gate Charge (Qg) | 15.4 nC | 26 nC (typ) |
| Input Capacitance (Ciss) | 1.1 nF | — |
| Output Capacitance (Coss) | 330 pF | — |
| Reverse Transfer Capacitance (Crss) | 10 pF | — |
| Power Dissipation (Pd) at Tc | 94 W | — |
| Power Dissipation (Pd) at Ta | 3 W | — |
| Avalanche Energy (EAS) | 185 mJ | — |
| 工作接面溫度 | -55 °C to +175 °C | -55°C to +150°C |
| 封裝 | SuperSO8 (TDSON-8) | PG-TDSON-8-6 (TDSON EP) |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | Compliant |
| Continuous Drain Current (ID) at TC=25°C | — | 64 A |
| Continuous Drain Current (ID) at TC=100°C | — | 45 A |
| Pulsed Drain Current (IDM) | — | 256 A |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 6.6 mΩ (max) |
| Gate Threshold Voltage (VGS(th)) | — | 1.7 V (typ) |
| Power Dissipation (PD) at TC=25°C | — | 46 W |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Thermal Resistance, Junction-to-Case (RθJC) | — | 1.3 °C/W |
| MSL 等級 | — | 1 |
| Technology | — | OptiMOS 5 60 V trench-gate |