ISC110N12NM6ATMA1 - 120V 9.8mΩ OptiMOS 6 N-MOSFET | Infineon
MPN： ISC110N12NM6ATMA1 ✓ 啟用中ISC110N12NM6ATMA1 概覽
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to control current flow between the drain and source terminals. The OptiMOS 6 family represents Infineon's latest generation of medium-voltage MOSFETs (40-300V) using advanced trench technology, sitting within the broader power management semiconductor hierarchy. Compared to older planar MOSFETs, OptiMOS 6 devices reduce on-resistance per die area by up to 30% and lower gate charge for faster switching, directly improving power-converter efficiency and reducing heatsink requirements.
Key features include an ultra-low 9.8 mΩ RDS(on) at 10V VGS, a 1.1 nF Ciss, 15.4 nC Qg, and ±20V gate-source rating. The avalanche energy rating of 185 mJ is significantly higher than competing 100V parts, providing robust tolerance to inductive switching transients. The SuperSO8 (TDSON-8) package exposes the die for top-side cooling, enabling a RthJA of approximately 50 C/W on a 1-square-inch copper pour.
The OptiMOS 6 cell architecture uses a deep-trench super-junction-like structure with an advanced p-body design to minimize the Miller charge and output capacitance charge. The result is a figure-of-merit (FOM = RDS(on) × Qg) under 200 mΩ·nC, enabling switching frequencies above 500 kHz in hard-switched topologies. This makes the ISC110N12NM6ATMA1 well-suited for small LLC and PFC stages where conventional MOSFETs would dominate the loss budget.
Typical applications include brushless DC motor drives in 18V-36V cordless power tools, 48V telecom and server hot-swap controllers, photovoltaic micro-inverters and charge controllers, and high-current synchronous rectification in USB-PD adapters. The wide 120V rating also supports industrial 24V and 36V bus systems with significant transient headroom.
When designing with this device, always provide a gate-drive voltage of 10V (the datasheet-specified condition for the 9.8 mΩ rating). The exposed pad must be soldered to a copper pour for thermal and electrical performance. Designers transitioning from older 100V parts should re-evaluate avalanche ruggedness and UIS (Unclamped Inductive Switching) limits.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet. XAIPART cross-references Infineon's OptiMOS 6 portfolio against competitor offerings to help engineers identify true drop-in replacements for the SuperSO8 footprint.
直接替換替代品，適用於 ISC110N12NM6ATMA1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： ISC110N12NM6ATMA1 （相同外形與佔位） — 差異在於 Drain-Source Voltage (VDS), Package, Operating Temperature Range, Technology, MSL Level.
ISC046N13NM6ATMA1
✅ 直接替換聯絡詢價
查看資料表 →ISC0805NLSATMA1
✅ 直接替換聯絡詢價
查看資料表 →ISC060N10NM6ATMA1
✅ 直接替換聯絡詢價
查看資料表 →BSC120N03LSGATMA1
✅ 直接替換聯絡詢價
查看資料表 →BSC066N06NSATMA1
✅ 直接替換聯絡詢價
查看資料表 →ISC110N12NM6ATMA1 最大額定值與電氣特性
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 120 V |
| Continuous Drain Current (ID) at Ta | 11 A |
| Continuous Drain Current (ID) at Tc | 62 A |
| On-Resistance RDS(on) max at VGS=10V | 9.8 mΩ |
| Gate-Source Voltage (VGS) max | ±20 V |
| Gate Threshold Voltage (VGS(th)) typ | 3.1 V |
| Total Gate Charge (Qg) | 15.4 nC |
| Input Capacitance (Ciss) | 1.1 nF |
| Output Capacitance (Coss) | 330 pF |
| Reverse Transfer Capacitance (Crss) | 10 pF |
| Power Dissipation (Pd) at Tc | 94 W |
| Power Dissipation (Pd) at Ta | 3 W |
| Avalanche Energy (EAS) | 185 mJ |
| 工作接面溫度 | -55 °C to +175 °C |
| 封裝 | SuperSO8 (TDSON-8) |
| 安裝類型 | Surface Mount |
| RoHS 狀態 | Compliant |
ISC110N12NM6ATMA1 腳位配置
| 腳位 1 | Source — Source connection (low-side) |
| 腳位 2 | Source — Source connection (low-side) |
| 腳位 3 | Source — Source connection (low-side) |
| 腳位 4 | Gate — Gate drive input |
| 腳位 5 | Source — Source connection (low-side) |
| 腳位 6 | Source — Source connection (low-side) |
| 腳位 7 | Source — Source connection (low-side) |
| 腳位 8 | Source — Source connection (low-side) |
| 腳位 Pad | Drain — Drain connection (exposed thermal pad, underside) |
安全工作區
典型應用
ISC110N12NM6ATMA1 適用於 6 應用s: Cordless Power Tool Motor Drive, 48V Telecom Hot-Swap / OR-ing Controller, Photovoltaic Micro-Inverter, USB-PD Synchronous Rectifier, Industrial 24V/36V Brushless DC Drive, EV Auxiliary Battery Disconnect.
Cordless Power Tool Motor Drive
The ISC110N12NM6ATMA1 fits 18V-36V brushless DC motor drive stages in cordless drills, impact drivers, and saws. With 9.8 mΩ RDS(on) and 62A continuous drain current at case temperature, the MOSFET handles the high-peak torque demands of motor start-up while keeping conduction losses below 5W. The 120V VDS rating comfortably tolerates the back-EMF spikes generated when PWM switching inductive loads, and the 185 mJ avalanche rating provides safety margin for UIS events during abrupt motor commutation. The SuperSO8 footprint allows two MOSFETs (high-side and low-side) to fit in less than 50 mm², critical for compact tool form factors.
推薦
48V Telecom Hot-Swap / OR-ing Controller
The ISC110N12NM6ATMA1 is well-matched to 48V telecom hot-swap and OR-ing FET roles in -48V powered systems, base stations, and central office equipment. The 120V drain-source voltage provides 2.5x margin above the nominal 48V rail, sufficient to absorb transient spikes and ringing from long cables. The 9.8 mΩ on-resistance minimizes steady-state conduction loss, while the 11A continuous current rating supports several hundred watts of card-level power. The OptiMOS 6 cell design provides low gate charge, reducing drive losses at the typical 100 kHz switching frequency of telecom hot-swap controllers.
推薦
Photovoltaic Micro-Inverter
The ISC110N12NM6ATMA1 is an efficient choice for photovoltaic micro-inverters and module-level power electronics (MLPE). The 120V VDS rating handles 60-cell or 72-cell panel open-circuit voltages, and the 9.8 mΩ RDS(on) reduces conduction loss in the high-frequency transformer-isolated topology. The OptiMOS 6 figure-of-merit (RDS(on) × Qg) enables switching at 200-500 kHz, allowing smaller magnetics and reducing the overall micro-inverter size and weight. The exposed SuperSO8 pad efficiently dissipates power, supporting the high-current pulses required during maximum power point tracking (MPPT) operation.
推薦
USB-PD Synchronous Rectifier
The ISC110N12NM6ATMA1 is an effective secondary-side synchronous rectifier (SR) in USB-Power-Delivery adapters and high-density AC-DC converters. The 120V rating covers the rectified 20V output rail with substantial margin, while the 9.8 mΩ RDS(on) reduces rectifier conduction loss to a fraction of a Schottky-diode equivalent. The 1.1 nF Ciss and 15.4 nC Qg allow SR controller ICs to drive the MOSFET directly at 200 kHz+ switching frequencies, enabling adapters above 95% efficiency. The SuperSO8 footprint is compatible with high-density flyback and active-clamp topologies.
推薦
Industrial 24V/36V Brushless DC Drive
The ISC110N12NM6ATMA1 is well-suited to industrial 24V and 36V brushless DC motor drives for robotics, automated guided vehicles, and small industrial pumps. The 120V VDS rating handles the 36V bus and inductive transients from motor switching, while the 9.8 mΩ RDS(on) minimizes thermal dissipation. The 62A continuous drain current at case temperature supports drives up to 1.5 kW peak power. The OptiMOS 6 cell design with its low output capacitance reduces switching losses at the 20-50 kHz PWM frequencies typical of industrial motor control.
推薦
EV Auxiliary Battery Disconnect
The ISC110N12NM6ATMA1 is suitable for 12V/24V auxiliary battery disconnect switches in mild-hybrid electric vehicles, e-bikes, and electric outboard motors. The 120V rating handles inductive kickback from contactor-style loads and supports 12V/48V battery systems. The 9.8 mΩ RDS(on) keeps continuous conduction loss low - critical for always-on auxiliary rails - while the 11A continuous current rating handles common automotive accessory loads. The SuperSO8 footprint fits behind the main contactor or in a small power distribution box.
推薦
推薦產品摘要
工程參考資料，適用於 ISC110N12NM6ATMA1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | ISC046N13NM6ATMA1 | ISC0805NLSATMA1 | ISC060N10NM6ATMA1 | BSC120N03LSGATMA1 | BSC066N06NSATMA1 |
|---|---|---|---|---|---|---|
| Package | SuperSO8 (TDSON-8) | SuperSO8 (TDSON-8) - same | SuperSO8 (TDSON-8) - same | SuperSO8 (TDSON-8) - same | SuperSO8 (TDSON-8) - same | SuperSO8 (TDSON-8) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS) | 120 V | 120 V (same) | 80 V (-33%) | 100 V (-17%) | 30 V (-75%) | 60 V (-50%) |
| Technology Generation | OptiMOS 6 | OptiMOS 6 (same) | OptiMOS 5 | OptiMOS 6 | OptiMOS 5 | OptiMOS 5 |
主要差異化特點
- Lowest on-resistance in OptiMOS 6 120V SuperSO8 family (對比ISC060N10NM6ATMA1)
- Higher avalanche energy rating than older 100V alternatives (對比VBQA1101N (cross-brand 100V part))
- OptiMOS 6 generation for lower FOM (對比BSC066N06NSATMA1 (OptiMOS 5))
設計說明
Estimated: at Tc=25°C, continuous ID=62A, the ISC110N12NM6ATMA1 dissipates I²R = 62² × 0.0098 = 37.7W. With junction-to-ambient thermal resistance of ~50 C/W on a 1-sq-inch copper pour, the junction would rise to 25 + 37.7×50 = 1910°C, far exceeding the 175°C limit. Practical operation must use a much larger copper area (4+ sq inches) or forced air cooling. The exposed pad of the SuperSO8 must be soldered to the PCB copper for both thermal and electrical performance - this is the primary drain connection.
The exposed thermal pad must be soldered to a top-side copper pour connected to the drain plane. Use thermal vias (12+ 0.3mm vias) to connect the top pad to inner drain planes. Keep the gate-loop area minimal: route the gate trace directly over the source pad to avoid miller-induced turn-on. For high-frequency switching (>200 kHz), place a 10Ω gate resistor in series with the driver output to control ringing, and a small ferrite bead on the gate return path to damp high-frequency oscillation.
Do not drive the ISC110N12NM6ATMA1 gate with 3.3V or 5V logic - the 3.1V threshold is a minimum turn-on voltage, not a recommended operating point. The datasheet 9.8 mΩ RDS(on) is only achieved at VGS=10V. Logic-level drive will cause the MOSFET to operate in its linear region, dissipating excessive power and possibly failing. Also, do not exceed VGS = ±20V, even briefly - the thin gate oxide will be damaged. Use a gate driver IC such as IFX9201SGAUMA1 for proper 10V drive with controlled rise/fall times.
合規資訊
RoHS compliant per Infineon product page. AEC-Q100 qualification: not specified for the standard grade - check ISC110N12NM6 variants for automotive-grade options.
