ISZ023N06LM6ATMA1 vs IPB60R040CFD7ATMA1 比較

詳細並排比較 ISZ023N06LM6ATMA1 由 Infineon 與 IPB60R040CFD7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPB60R040CFD7ATMA1 IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 ✓ 啟用中

規格比較

參數 ISZ023N06LM6ATMA1 IPB60R040CFD7ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
庫存狀態 — In Stock
單價 (USD) — $5.19
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 6 60 V —
Part Number ISZ023N06LM6 —
Orderable Part Number ISZ023N06LM6ATMA1 —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) Superjunction (SJ) N-Channel MOSFET
Drain-Source Voltage (VDS) 60 V 600 V
Continuous Drain Current (ID) at Ta 24 A —
Pulsed Drain Current (ID, Tc) 149 A —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 100 W —
封裝 PG-TSDSON-8-34 (Surface Mount) PG-TO263-3-2 (D2PAK)
安裝類型 Surface Mount Surface Mount
工作溫度 -55C to +175C —
MSL 等級 1 1
RoHS 狀態 Compliant Compliant
Lead-Free Yes Yes
Configuration Single —
Product Family — CoolMOS CFD7
Continuous Drain Current (ID, Tc=25°C) — 50 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V — 40 mΩ
Gate Threshold Voltage VGS(th) typ — 4 V
Total Gate Charge Qg typ — [DATA_NEEDED: Qg]
功率耗散 (TC=25°C) — 227 W
工作溫度範圍 — -55°C to +150°C
Integrated Body Diode — Yes - ultra-fast CoolMOS CFD7 diode
Target Applications — Soft-switching topologies (ZVS phase-shift full-bridge, LLC)

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