K3KL3L30CM-BGCU vs K3LK4L40DM-BGCT 比較
詳細並排比較 K3KL3L30CM-BGCU 由 Samsung Electronics 與 K3LK4L40DM-BGCT 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ 啟用中規格比較
| 參數 | K3KL3L30CM-BGCU | K3LK4L40DM-BGCT |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | DRAM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | LPDDR5X SDRAM (Volatile DRAM) | DRAM (SDRAM component) |
| 記憶體容量 | 64 Gb (8 GB) | — |
| 資料速率 | 8533 Mbps | [DATA_NEEDED: Data Rate] |
| Memory Organization | x64 | — |
| Technology | LPDDR5X (JEDEC LPDDR5X-class low-power DRAM) | — |
| 封裝 | FBGA-496 (BGCU) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Die Configuration | Stacked multi-die DRAM | — |
| 介面 | LPDDR5X (standard LPDDR ball interface) | — |
| Application Segment | AI devices and automotive | — |
| Power Efficiency | Approx. 25% better than previous LPDDR5 generation (per Samsung) | — |
| Speed Improvement | Up to 1.25x faster than previous generation (per Samsung) | — |
| Supply Voltage Class | [DATA_NEEDED: VDD/VDDQ voltage] | [DATA_NEEDED: Supply Voltage] |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature Range] |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: Moisture Sensitivity Level] |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| Place of Origin (per distributor listing) | Johor, Malaysia | — |
| Manufacturer | — | Samsung Electronics |
| Density | — | [DATA_NEEDED: Density] |
| Organization (x-width) | — | [DATA_NEEDED: Organization] |
| CAS 延遲 | — | [DATA_NEEDED: CAS Latency] |
| Package Type | — | BGA (per -BGC ordering-code suffix) |
| Package Ball Count | — | [DATA_NEEDED: Ball Count] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Interval] |
| Lead Free | — | [DATA_NEEDED: Lead-Free Status] |
| Packaging | — | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] |