K3KL5L50DM-BGCU vs K3LK3L30CM-BGCU 比較
詳細並排比較 K3KL5L50DM-BGCU 由 Samsung Electronics 與 K3LK3L30CM-BGCU 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K3KL5L50DM-BGCU | K3LK3L30CM-BGCU |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | LPDDR5X SDRAM | LPDDR5X SDRAM (Low Power Double Data Rate 5X) |
| Density | 128 Gb (16 GB) | 64 Gb (8 GB) |
| 資料速率 | 8533 Mbps per pin | 8533 Mbps per pin |
| 組織 | [DATA_NEEDED: organization (x)] | [DATA_NEEDED: organization / bus width] |
| Supply Voltage (VDD) | [DATA_NEEDED: VDD voltage] | — |
| 封裝 | [DATA_NEEDED: package ball count / FBGA code] | 496-ball FBGA (BGC) |
| 安裝類型 | Surface Mount (BGA) | Surface Mount (BGA) |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| 介面 | LPDDR5X (JEDEC low-power DRAM interface) | — |
| Prefetch | 16n (LPDDR5/5X architecture) | — |
| Power Efficiency | approx. 20% better than LPDDR5 (per Samsung LPDDR5X family page) | Approx. 25% better than previous LPDDR generation (per Samsung LPDDR5X announcement) |
| CAS 延遲 | [DATA_NEEDED: CAS latency] | — |
| Refresh | [DATA_NEEDED: refresh scheme] | — |
| RoHS 狀態 | unknown | [DATA_NEEDED: RoHS status] |
| Production Status | In production (in stock at distributors) | — |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| Die Configuration | — | Stacked DRAM die (multi-die package) |
| Supply Voltage VDD | — | [DATA_NEEDED: VDD voltage] |
| Supply Voltage VDDQ | — | [DATA_NEEDED: VDDQ voltage] |
| Speed vs Prior Generation | — | Up to 1.25x faster than previous generation (per Samsung LPDDR5X announcement) |
| Target Applications | — | AI devices, in-vehicle devices, mobile computing |
| Packaging | — | [DATA_NEEDED: tray / reel and standard quantity] |