K3KL8L80DM-MGCU vs K3KLALA0DM-MGCU 比較

詳細並排比較 K3KL8L80DM-MGCU 由 Samsung Electronics 與 K3KLALA0DM-MGCU 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Samsung Electronics
K3KL8L80DM-MGCU K3KL8L80DM-MGCU - 8Gb LPDDR5X DRAM 1Gx32 | Samsung

K3KL8L80DM-MGCU - 8Gb LPDDR5X DRAM 1Gx32 | Samsung

K3KL8L80DM-MGCU ✓ 啟用中
Samsung Electronics
K3KLALA0DM-MGCU K3KLALA0DM-MGCU - 16Gb LPDDR5X DRAM 6400Mbps | Samsung

K3KLALA0DM-MGCU - 16Gb LPDDR5X DRAM 6400Mbps | Samsung

K3KLALA0DM-MGCU ✓ 啟用中

規格比較

參數 K3KL8L80DM-MGCU K3KLALA0DM-MGCU
品牌 Samsung Electronics Samsung Electronics
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 LPDDR5X SDRAM LPDDR5X SDRAM
Density 8 Gbit 16 Gbit (2 GB) per die
組織 1G x 32 [DATA_NEEDED: die organization x16/x32]
Supply Voltage (VDD) 1.05 V —
封裝 FBGA-315 315-ball FBGA
安裝類型 Surface Mount Surface Mount
介面 LPDDR5X (JEDEC LPDDR5 backward-compatible) LPDDR5X (LPDDR5X-class channel)
資料速率 [DATA_NEEDED: max data rate / speed grade] —
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Refresh Self-refresh with per-bank refresh support —
Power Management Deep Sleep Mode (LPDDR5 feature set) —
Configuration Single-die, 32-bit bus —
RoHS 狀態 unknown [DATA_NEEDED: RoHS status]
MSL 等級 [DATA_NEEDED: moisture sensitivity level] —
Application Segment Mobile / Automotive / Edge AI —
Maximum Data Rate — 6400 Mbps per pin
Supply Voltage - Core (VDD1) — [DATA_NEEDED: VDD1 voltage]
Supply Voltage - I/O (VDD2/VDDQ) — [DATA_NEEDED: VDDQ voltage]
Speed Grade Suffix — MGCU (6400 Mbps class)
Grade — Mobile / Low Power Mobile Grade
Ball Pitch — [DATA_NEEDED: ball pitch mm]
Place of Origin — Johor, Malaysia (per distributor listing)
DRAM Process — Advanced DRAM node (EUV-class per Samsung LPDDR5X family)

資料表與資源

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