K3KLALA0DM-MGCU vs K3KL9L90DM-JGCT 比較

詳細並排比較 K3KLALA0DM-MGCU 由 Samsung Electronics 與 K3KL9L90DM-JGCT 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Samsung Electronics
K3KLALA0DM-MGCU K3KLALA0DM-MGCU - 16Gb LPDDR5X DRAM 6400Mbps | Samsung

K3KLALA0DM-MGCU - 16Gb LPDDR5X DRAM 6400Mbps | Samsung

K3KLALA0DM-MGCU ✓ 啟用中
Samsung Electronics
K3KL9L90DM-JGCT K3KL9L90DM-JGCT - LPDDR5X DRAM 16Gbit FBGA-315 | Samsung

K3KL9L90DM-JGCT - LPDDR5X DRAM 16Gbit FBGA-315 | Samsung

K3KL9L90DM-JGCT ✓ 啟用中

規格比較

參數 K3KLALA0DM-MGCU K3KL9L90DM-JGCT
品牌 Samsung Electronics Samsung Electronics
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 LPDDR5X SDRAM LPDDR5X SDRAM
Density 16 Gbit (2 GB) per die 16 Gbit
Maximum Data Rate 6400 Mbps per pin —
介面 LPDDR5X (LPDDR5X-class channel) [DATA_NEEDED: channel configuration]
封裝 315-ball FBGA FBGA-315
組織 [DATA_NEEDED: die organization x16/x32] [DATA_NEEDED: x organization]
Supply Voltage - Core (VDD1) [DATA_NEEDED: VDD1 voltage] —
Supply Voltage - I/O (VDD2/VDDQ) [DATA_NEEDED: VDDQ voltage] —
Speed Grade Suffix MGCU (6400 Mbps class) —
Grade Mobile / Low Power Mobile Grade —
安裝類型 Surface Mount Surface Mount
Ball Pitch [DATA_NEEDED: ball pitch mm] —
工作溫度 [DATA_NEEDED: operating temperature range] -25C to +85C
Place of Origin Johor, Malaysia (per distributor listing) —
RoHS 狀態 [DATA_NEEDED: RoHS status] Compliant
DRAM Process Advanced DRAM node (EUV-class per Samsung LPDDR5X family) —
資料速率 — [DATA_NEEDED: data rate for JGCT speed grade]
Supply Voltage (VDD) — [DATA_NEEDED: core supply voltage]
I/O Voltage (VDDQ) — [DATA_NEEDED: I/O supply voltage]
Bank Architecture — [DATA_NEEDED: bank/group configuration]
MSL 等級 — [DATA_NEEDED: moisture sensitivity level]
Package Dimensions — [DATA_NEEDED: body dimensions]
AEC-Q100 — [DATA_NEEDED: automotive qualification status]

資料表與資源

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