K3KLELE0DM-BGCU vs K3KLALA0DM-MGCU 比較
詳細並排比較 K3KLELE0DM-BGCU 由 Samsung Electronics 與 K3KLALA0DM-MGCU 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K3KLELE0DM-BGCU | K3KLALA0DM-MGCU |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 停產終止 | 啟用中 |
| Density | 144 Gb | 16 Gbit (2 GB) per die |
| 記憶體類型 | LPDDR5X SDRAM | LPDDR5X SDRAM |
| 組織 | x64 | [DATA_NEEDED: die organization x16/x32] |
| 資料速率 | 8533 Mbps | — |
| Supply Voltage (VDD1) | 1.8 V | — |
| Supply Voltage (VDD2) | 1.05 V | — |
| Supply Voltage (VDDQ) | 0.9 V | — |
| Supply Voltage (VDDCA) | 0.5 V | — |
| 封裝 | 496-ball FBGA | 315-ball FBGA |
| 工作溫度 | -25 C to +85 C | [DATA_NEEDED: operating temperature range] |
| 安裝類型 | Surface Mount | Surface Mount |
| Application Class | AI and in-vehicle devices | — |
| Product Status | EOL | — |
| 介面 | LPDDR5X | LPDDR5X (LPDDR5X-class channel) |
| Power Efficiency vs Previous Generation | Approx. 25% better (per Samsung) | — |
| Speed vs Previous Generation | Approx. 1.25x faster (per Samsung) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Maximum Data Rate | — | 6400 Mbps per pin |
| Supply Voltage - Core (VDD1) | — | [DATA_NEEDED: VDD1 voltage] |
| Supply Voltage - I/O (VDD2/VDDQ) | — | [DATA_NEEDED: VDDQ voltage] |
| Speed Grade Suffix | — | MGCU (6400 Mbps class) |
| Grade | — | Mobile / Low Power Mobile Grade |
| Ball Pitch | — | [DATA_NEEDED: ball pitch mm] |
| Place of Origin | — | Johor, Malaysia (per distributor listing) |
| DRAM Process | — | Advanced DRAM node (EUV-class per Samsung LPDDR5X family) |