K3LK4L40DM-BGCT vs MT40A512M8RH-075E:B 比較
詳細並排比較 K3LK4L40DM-BGCT 由 Samsung Electronics 與 MT40A512M8RH-075E:B 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ 啟用中
規格比較
| 參數 | K3LK4L40DM-BGCT | MT40A512M8RH-075E:B |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DRAM (SDRAM component) | DDR4 SDRAM |
| Manufacturer | Samsung Electronics | — |
| Density | [DATA_NEEDED: Density] | 4 Gbit |
| Organization (x-width) | [DATA_NEEDED: Organization] | — |
| 資料速率 | [DATA_NEEDED: Data Rate] | 2666 MT/s (DDR4-2666) |
| Supply Voltage Class | [DATA_NEEDED: Supply Voltage] | — |
| CAS 延遲 | [DATA_NEEDED: CAS Latency] | — |
| Package Type | BGA (per -BGC ordering-code suffix) | — |
| Package Ball Count | [DATA_NEEDED: Ball Count] | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range (standard grade)] |
| Refresh Rate | [DATA_NEEDED: Refresh Interval] | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| Lead Free | [DATA_NEEDED: Lead-Free Status] | — |
| MSL 等級 | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| Packaging | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] | — |
| 組織 | — | 512M x 8 |
| Clock Frequency | — | 1333 MHz (1.33 GHz) |
| VDD Supply Voltage | — | 1.2 V +/-60 mV |
| VDDQ Supply Voltage | — | 1.2 V +/-60 mV |
| VPP Supply Voltage | — | 2.5 V, -125 mV/+250 mV |
| 介面類型 | — | Parallel |
| I/O Structure | — | 1.2V pseudo open-drain |
| 參考電壓 | — | On-die internal adjustable VREFDQ generation |
| 封裝 | — | 78-FBGA (9 x 10.5 mm), TFBGA |
| Refresh | — | Refresh max interval extension at extended TC temperature range (125C capable per family features) |
| Speed Grade Suffix | — | -075E |
| Packaging Option Suffix | — | :B (ball map B designation per Mouser listing) |