K3LK8K80CM-MFCP vs K3LKCKC0BM-MGCP 比較
詳細並排比較 K3LK8K80CM-MFCP 由 Samsung Electronics 與 K3LKCKC0BM-MGCP 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K3LK8K80CM-MFCP | K3LKCKC0BM-MGCP |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | LPDDR5 SDRAM | LPDDR5 SDRAM (DRAM) |
| Density | 48 Gbit (6 GB) | — |
| 組織 | [DATA_NEEDED: organization (x width)] | — |
| Pin Speed | 6400 Mbps | — |
| Data Rate (package) | 51.2 GB/s (family max) | — |
| 介面 | LPDDR5 (JESD209-5 class low-power DRAM interface) | Parallel |
| 封裝 | 315-ball FBGA (MFCP) | FBGA-315 (PBGA315) |
| Ball Count | 315 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -40 C to +105 C (automotive-grade) | -25 C to +85 C |
| 供應電壓 | [DATA_NEEDED: VDD/VDDQ voltage] | — |
| Power Saving vs LPDDR4X | Approximately 20% | — |
| Generation | LPDDR5 (5th generation low-power DRAM) | — |
| Application Grade | Automotive-grade storage chip | — |
| Place of Origin | Johor, Malaysia | — |
| RoHS 狀態 | unknown | Compliant |
| 記憶體容量 | — | 64 Gbit |
| Memory Organization | — | 2G x32 |
| 資料速率 | — | 6400 Mbps |
| Technology | — | CMOS |
| Supply Voltages | — | 500 mV, 900 mV, 1.05 V, 1.8 V |
| Volatile / Non-Volatile | — | Volatile |
| Clock Frequency | — | [DATA_NEEDED: clock frequency] |
| Access Time | — | [DATA_NEEDED: access time] |
| Power Consumption - Active | — | [DATA_NEEDED: active power] |
| Power Consumption - Standby | — | [DATA_NEEDED: standby power] |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |