K4A4G165WF-BCTD vs K3LK4L40DM-BGCT 比較
詳細並排比較 K4A4G165WF-BCTD 由 Samsung Electronics 與 K3LK4L40DM-BGCT 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ 啟用中規格比較
| 參數 | K4A4G165WF-BCTD | K3LK4L40DM-BGCT |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | DRAM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | In Stock | — |
| 單價 (USD) | $8.20 | — |
| 記憶體類型 | DDR4 SDRAM | DRAM (SDRAM component) |
| 記憶體容量 | 4 Gbit | — |
| 組織 | 256M x 16 | — |
| Speed (Data Rate) | 2666 Mbps (DDR4-2666) | — |
| Supply Voltage VDD | 1.2 V (1.14 V to 1.26 V) | — |
| I/O Voltage VDDQ | 1.2 V | — |
| 介面 | SSTL-12 | — |
| 封裝 | FBGA-96 (PBGA96) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | 0C to +95C | [DATA_NEEDED: Operating Temperature Range] |
| 功能特色 | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Technology | Samsung F-die CMOS | — |
| Bank Groups | 4 (x16 configuration) | — |
| Refresh | Self-refresh and auto-refresh supported | — |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS Status] |
| Manufacturer | — | Samsung Electronics |
| Density | — | [DATA_NEEDED: Density] |
| Organization (x-width) | — | [DATA_NEEDED: Organization] |
| 資料速率 | — | [DATA_NEEDED: Data Rate] |
| Supply Voltage Class | — | [DATA_NEEDED: Supply Voltage] |
| CAS 延遲 | — | [DATA_NEEDED: CAS Latency] |
| Package Type | — | BGA (per -BGC ordering-code suffix) |
| Package Ball Count | — | [DATA_NEEDED: Ball Count] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Interval] |
| Lead Free | — | [DATA_NEEDED: Lead-Free Status] |
| MSL 等級 | — | [DATA_NEEDED: Moisture Sensitivity Level] |
| Packaging | — | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] |