K4A8G085WB-BCRC vs H5AN8G6NDJR-XNC 比較
詳細並排比較 K4A8G085WB-BCRC 由 Samsung Electronics 與 H5AN8G6NDJR-XNC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A8G085WB-BCRC | H5AN8G6NDJR-XNC |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | — | $55.68 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| 組織 | 1G x 8 | — |
| 資料速率 | 2400 Mbps | 3200 Mbps |
| 供應電壓 | 1.2 V | — |
| 工作溫度 | 0°C to 85°C | — |
| 封裝 | 78-ball FBGA | FBGA-96 (13x7.5 mm) |
| Number of Terminals | 78 | 96 |
| Refresh Cycles | 8192 | — |
| Access Time | 0.175 ns | — |
| Technology | CMOS | — |
| Burst Length | 8 and 4 | — |
| On-Die Termination | Yes | — |
| Auto-Refresh | Yes | — |
| Self-Refresh | Yes | — |
| RoHS | Compliant | Compliant |
| 記憶體容量 | — | 8 Gb |
| Memory Organization | — | 512M x16 |
| Supply Voltage (VDD) | — | 1.2 V (max 1.26 V) |
| Maximum Operating Temperature | — | 85 °C |
| Input/Output Type | — | COMMON |
| Lead-Free | — | Yes |
| 無鹵素 | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Data Mask | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| Write Leveling | — | Yes |
| Asynchronous Reset | — | Yes |