K4B4G1646D-BYK00 vs MT41K256M16HA-15EM:E 比較
詳細並排比較 K4B4G1646D-BYK00 由 Samsung Electronics 與 MT41K256M16HA-15EM:E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ 啟用中Micron Technology
MT41K256M16HA-15EM:E - 4Gb DDR3L SDRAM 256Mx16 | Micron
MT41K256M16HA-15EM:E ✓ 啟用中規格比較
| 參數 | K4B4G1646D-BYK00 | MT41K256M16HA-15EM:E |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gbit |
| 組織 | 256M x 16 | 256M x 16 |
| 資料速率 | 1600 Mbps | 1333 Mbps (DDR3L-1333) |
| 供應電壓 | 1.35 V (also operates at 1.5 V) | 1.35 V (1.5V compatible) |
| 封裝 | 96-ball TFBGA | 96-ball FBGA (9x14mm) |
| Number of Terminals | 96 | — |
| 工作溫度 | 0°C to 85°C | [DATA_NEEDED: operating temperature range] |
| CAS 延遲 | Programmable | 15 |
| Additional Features | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| 無鹵素 | Yes | — |
| Package Shape | RECTANGULAR | — |
| Temperature Grade | OTHER | — |
| 安裝類型 | — | Surface Mount |
| RoHS 狀態 | — | Compliant |
| 腳位數 | — | 96 |
| Access Time | — | 13.75 ns |
| Clock Frequency | — | 800 MHz |
| 介面 | — | Parallel |