K4B4G1646E-BYK000 vs K4B4G1646D-BYH90 比較
詳細並排比較 K4B4G1646E-BYK000 由 Samsung Electronics 與 K4B4G1646D-BYH90 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4B4G1646E-BYK000 | K4B4G1646D-BYH90 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR3L SDRAM | DDR3L SDRAM |
| 記憶體容量 | 4 Gbit | — |
| 組織 | 256M x 16 | 512M x 16 |
| Speed Grade | DDR3-1600 (1.25 ns clock cycle) | — |
| Clock Frequency | 800 MHz | — |
| CAS Latency (CL) | [DATA_NEEDED: CAS latency - 1.25 ns CL grade indicates CL11 but not explicitly stated in provided data] | — |
| Supply Voltage (VDD) | 1.35 V (DDR3L), 1.5 V compatible (DDR3) | — |
| Number of Banks | [DATA_NEEDED: bank count] | 8 |
| Die Process | Samsung E-die | — |
| 封裝 | 96-FBGA (BYK) | 96-ball FBGA (TFBGA) |
| 安裝類型 | Surface Mount | — |
| 介面 | Parallel | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | 0°C to +85°C |
| 功能特色 | Auto precharge, asynchronous reset, ZQ calibration, dynamic on-chip termination, data mask | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | — |
| Access Time | 1.25 ns | — |
| Density | — | 4 Gb |
| 資料速率 | — | 2133 Mbps/pin |
| 供應電壓 | — | 1.35V (1.283V to 1.45V) |
| I/O Interface | — | x16 |
| Ball Pitch | — | 0.8 mm |
| CAS 延遲 | — | Programmable (e.g., 11, 12, 13) |
| Burst Length | — | 8 and 4 (with burst chop) |
| On-Die Termination | — | Yes (ODT pin) |
| ZQ Calibration | — | Yes (240-ohm resistor to ground) |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| 無鹵素 | — | Yes |