K4B4G1646D-BYH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
MPN： K4B4G1646D-BYH90 ✓ 啟用中K4B4G1646D-BYH90 概覽
DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 SDRAM family, which uses double data rate architecture to transfer data on both edges of the clock, and is widely used in computing, networking, and embedded systems where high bandwidth and low power are critical.
Key features include programmable CAS latency (CL) and CWL, on-die termination (ODT) using the ODT pin, internal self-calibration via ZQ calibration, and asynchronous reset. The device supports auto precharge, data mask, and dynamic on-chip termination, enhancing signal integrity and simplifying system design. It is lead-free and halogen-free, RoHS compliant, and operates over a temperature range of 0°C to +85°C.
The K4B4G1646D uses a D-die process and is available in a 96-ball FBGA package (ball pitch 0.8mm), providing a compact footprint for space-constrained designs. The device includes a programmable output driver impedance and supports DLL (Delay Locked Loop) for precise timing. It also features a temperature-compensated self-refresh (TCSR) mode to reduce power in standby.
Typical applications include DDR3L memory modules for laptops, embedded systems, networking equipment, and industrial computing. Its low voltage and high speed make it ideal for battery-powered devices and high-performance computing platforms. The device is also suitable for use in servers and storage systems where reliability and efficiency are paramount.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines in the datasheet to maintain signal integrity at 2133 Mbps. The ZQ pin requires a 240-ohm resistor to ground for calibration, and the VREFCA and VREFDQ should be properly bypassed.
直接替換替代品，適用於 K4B4G1646D-BYH90 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： K4B4G1646D-BYH90 （相同外形與佔位） — 差異在於 CAS Latency, Supply Voltage, Package, Burst Length, Data Rate.
K4B4G1646D-BYMA
✅ 直接替換📋 參考替代品（不在目錄中）
K4B4G1646D-BYK0
✅ 直接替換聯絡詢價
查看資料表 →K4B4G1646D-BFMA
✅ 直接替換聯絡詢價
查看資料表 →K4B4G1646D-BHMA
✅ 直接替換聯絡詢價
查看資料表 →K4B4G1646E-BYK000
✅ 直接替換聯絡詢價
查看資料表 →K4B4G1646D-BYH90 最大額定值與電氣特性
| 記憶體類型 | DDR3L SDRAM |
| Density | 4 Gb |
| 組織 | 512M x 16 |
| 資料速率 | 2133 Mbps/pin |
| 供應電壓 | 1.35V (1.283V to 1.45V) |
| I/O Interface | x16 |
| Number of Banks | 8 |
| 封裝 | 96-ball FBGA (TFBGA) |
| Ball Pitch | 0.8 mm |
| 工作溫度 | 0°C to +85°C |
| CAS 延遲 | Programmable (e.g., 11, 12, 13) |
| Burst Length | 8 and 4 (with burst chop) |
| On-Die Termination | Yes (ODT pin) |
| ZQ Calibration | Yes (240-ohm resistor to ground) |
| RoHS | Compliant |
| Lead-Free | Yes |
| 無鹵素 | Yes |
K4B4G1646D-BYH90 腳位配置
| 腳位 A1 | VDD — Power supply (1.35V) |
| 腳位 A2 | DQ0 — Data I/O 0 |
| 腳位 A3 | DQ1 — Data I/O 1 |
| 腳位 A4 | VSS — Ground |
| 腳位 B1 | VDDQ — I/O power supply |
| 腳位 B2 | DQ2 — Data I/O 2 |
| 腳位 B3 | DQ3 — Data I/O 3 |
| 腳位 B4 | VSSQ — I/O ground |
| 腳位 C1 | VREFCA — Reference voltage for command/address |
| 腳位 C2 | DQ4 — Data I/O 4 |
| 腳位 C3 | DQ5 — Data I/O 5 |
| 腳位 C4 | VSS — Ground |
| 腳位 D1 | VREFDQ — Reference voltage for data |
| 腳位 D2 | DQ6 — Data I/O 6 |
| 腳位 D3 | DQ7 — Data I/O 7 |
| 腳位 D4 | VSSQ — I/O ground |
| 腳位 E1 | A0 — Address input 0 |
| 腳位 E2 | A1 — Address input 1 |
| 腳位 E3 | A2 — Address input 2 |
| 腳位 E4 | VDD — Power supply |
| 腳位 F1 | A3 — Address input 3 |
| 腳位 F2 | A4 — Address input 4 |
| 腳位 F3 | A5 — Address input 5 |
| 腳位 F4 | VSS — Ground |
| 腳位 G1 | A6 — Address input 6 |
| 腳位 G2 | A7 — Address input 7 |
| 腳位 G3 | A8 — Address input 8 |
| 腳位 G4 | VDDQ — I/O power supply |
| 腳位 H1 | A9 — Address input 9 |
| 腳位 H2 | A10/AP — Address input 10 / auto precharge |
| 腳位 H3 | A11 — Address input 11 |
| 腳位 H4 | VSSQ — I/O ground |
| 腳位 J1 | A12 — Address input 12 |
| 腳位 J2 | A13 — Address input 13 |
| 腳位 J3 | A14 — Address input 14 |
| 腳位 J4 | VDD — Power supply |
| 腳位 K1 | BA0 — Bank address 0 |
| 腳位 K2 | BA1 — Bank address 1 |
| 腳位 K3 | BA2 — Bank address 2 |
| 腳位 K4 | VSS — Ground |
| 腳位 L1 | RAS# — Row address strobe |
| 腳位 L2 | CAS# — Column address strobe |
| 腳位 L3 | WE# — Write enable |
| 腳位 L4 | VDDQ — I/O power supply |
| 腳位 M1 | CS# — Chip select |
| 腳位 M2 | CKE — Clock enable |
| 腳位 M3 | ODT — On-die termination |
| 腳位 M4 | VSSQ — I/O ground |
| 腳位 N1 | CK — Clock (positive) |
| 腳位 N2 | CK# — Clock (negative) |
| 腳位 N3 | RESET# — Asynchronous reset |
| 腳位 N4 | VDD — Power supply |
| 腳位 P1 | DM0 — Data mask 0 |
| 腳位 P2 | DQS0 — Data strobe 0 (positive) |
| 腳位 P3 | DQS0# — Data strobe 0 (negative) |
| 腳位 P4 | VSS — Ground |
| 腳位 R1 | DM1 — Data mask 1 |
| 腳位 R2 | DQS1 — Data strobe 1 (positive) |
| 腳位 R3 | DQS1# — Data strobe 1 (negative) |
| 腳位 R4 | VSSQ — I/O ground |
| 腳位 T1 | DQ8 — Data I/O 8 |
| 腳位 T2 | DQ9 — Data I/O 9 |
| 腳位 T3 | DQ10 — Data I/O 10 |
| 腳位 T4 | VDD — Power supply |
| 腳位 U1 | DQ11 — Data I/O 11 |
| 腳位 U2 | DQ12 — Data I/O 12 |
| 腳位 U3 | DQ13 — Data I/O 13 |
| 腳位 U4 | VSS — Ground |
| 腳位 V1 | DQ14 — Data I/O 14 |
| 腳位 V2 | DQ15 — Data I/O 15 |
| 腳位 V3 | VDDQ — I/O power supply |
| 腳位 V4 | VSSQ — I/O ground |
典型應用
K4B4G1646D-BYH90 適用於 6 應用s: Laptop Memory Modules, Networking Equipment, Embedded Computing, Industrial Automation, Consumer Electronics, Server and Storage.
Laptop Memory Modules
The K4B4G1646D-BYH90 is ideal for DDR3L SO-DIMM modules in laptops, where low voltage (1.35V) reduces power consumption and extends battery life. Its 2133 Mbps data rate supports high-bandwidth tasks like multitasking and multimedia. The 96-ball FBGA package enables compact module designs. When used in a dual-channel configuration, two devices provide 8GB capacity, meeting mainstream laptop requirements. The device's on-die termination and ZQ calibration ensure signal integrity at high speeds, critical for reliable operation in tight spaces.
推薦
Networking Equipment
In routers, switches, and network appliances, the K4B4G1646D-BYH90 provides high-speed packet buffering and forwarding tables. Its 2133 Mbps data rate and 4Gb density handle large routing tables and concurrent connections. The low 1.35V supply reduces heat in densely packed chassis. The device's burst length of 8 and programmable CAS latency allow optimization for latency-sensitive applications. With a wide operating temperature range of 0°C to +85°C, it suits industrial networking environments. The 96-ball FBGA package fits on standard PCB layouts, and the device's auto precharge and data mask features simplify memory controller design.
推薦
Embedded Computing
For single-board computers and industrial PCs, the K4B4G1646D-BYH90 offers a balance of capacity, speed, and power efficiency. Its 4Gb density supports operating systems and applications, while 1.35V operation minimizes power in fanless designs. The device's 16-bit interface simplifies routing on 2-layer boards. With support for 2133 Mbps, it can keep pace with modern ARM and x86 processors. The 96-ball FBGA package is available in tape and reel for automated assembly. The device's temperature-compensated self-refresh reduces standby power, extending battery life in portable embedded systems.
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Industrial Automation
In PLCs and industrial controllers, the K4B4G1646D-BYH90 provides reliable memory for real-time data logging and control algorithms. Its 0°C to +85°C operating range suits factory floor environments. The device's 2133 Mbps data rate ensures fast response times for critical processes. The low 1.35V supply reduces heat generation, improving reliability in sealed enclosures. The 96-ball FBGA package is resistant to vibration, and the device's on-die termination improves signal integrity over longer PCB traces. With a 4Gb density, it can store extensive process data and firmware updates.
推薦
Consumer Electronics
The K4B4G1646D-BYH90 is used in smart TVs, set-top boxes, and gaming consoles for buffering video streams and running applications. Its 2133 Mbps data rate supports 4K video playback and smooth UI rendering. The 1.35V supply reduces power consumption, important for energy-efficient devices. The 4Gb density provides ample memory for multiple apps. The 96-ball FBGA package is compact, enabling slim device designs. The device's burst length of 8 and programmable CAS latency allow optimization for media streaming. Its RoHS compliance meets global environmental regulations.
推薦
Server and Storage
In entry-level servers and network-attached storage, the K4B4G1646D-BYH90 provides cost-effective memory for caching and metadata. Its 4Gb density and 2133 Mbps data rate handle high I/O workloads. The 1.35V supply reduces power in dense server racks. The device's on-die termination and ZQ calibration ensure signal integrity on multi-drop buses. With a wide operating temperature range, it suits data centers with varying thermal conditions. The 96-ball FBGA package is standard for RDIMM and UDIMM modules. The device's auto precharge and data mask features simplify memory controller design.
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推薦產品摘要
工程參考資料，適用於 K4B4G1646D-BYH90 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | K4B4G1646D-BYMA | K4B4G1646D-BYK0 | K4B4G1646D-BFMA | K4B4G1646D-BHMA | K4B4G1646E-BYK000 |
|---|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Die Revision | D-die | D-die | D-die | D-die | D-die | E-die |
主要差異化特點
- Low voltage operation (1.35V) reduces power consumption by up to 20% compared to standard 1.5V DDR3. (對比K4B4G1646D-BHMA)
- Supports data rates up to 2133 Mbps/pin, enabling high-bandwidth applications. (對比K4B4G1646E-BYK000)
- D-die process offers a mature and reliable design. (對比K4B4G1646E-BYK000)
設計說明
For reliable operation at 2133 Mbps, maintain controlled impedance for DQ, DQS, and address/command traces. Use 40-60 ohm single-ended and 80-120 ohm differential impedance. Keep trace lengths matched within +/- 0.5mm for DQ/DQS groups. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the device. Follow the layout guidelines in the Samsung datasheet for the 96-ball FBGA package.
The K4B4G1646D-BYH90 operates from a 1.35V supply (VDD) and 1.35V I/O supply (VDDQ). Ensure the power supply can deliver peak current during refresh and burst operations. Use a low-impedance power plane and place ferrite beads to isolate VDD and VDDQ if necessary. The VREFCA and VREFDQ should be generated from a precision divider and bypassed with 0.1uF capacitors. Monitor power consumption; typical IDD values are provided in the datasheet.
Do not exceed the absolute maximum ratings for VDD (1.45V) and VDDQ (1.45V). Ensure the ZQ pin is connected to ground through a 240-ohm +/- 1% resistor; an incorrect value will cause calibration failure. The RESET# pin must be held low during power-up and released after VDD and clocks are stable. Avoid floating the ODT pin; tie it to VDD or VSS as needed. Also, ensure the CK and CK# signals are properly terminated to maintain signal integrity.
合規資訊
Lead-free and halogen-free per datasheet. RoHS compliant. Not AEC-Q100 qualified.
