K4RAH165VB-BCQK vs K4RAH086VP-BCWM 比較
詳細並排比較 K4RAH165VB-BCQK 由 Samsung Electronics 與 K4RAH086VP-BCWM 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4RAH165VB-BCQK | K4RAH086VP-BCWM |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR5 SDRAM | DDR5 SDRAM |
| 記憶體容量 | 16 Gb | 16 Gb |
| Memory Organization | 1G x 16 | 2G x 8 |
| Memory Interface | Parallel | — |
| 資料速率 | 4800 Mbps | 5600 Mbps/pin |
| Supply Voltage (VDD) | 1.1 V | — |
| Error Correction | On-die ECC | — |
| 功能特色 | Auto self-refresh, asynchronous reset, on-chip ECC, write leveling, CRC, ZQ calibration | — |
| 工作溫度 | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| 封裝 | 106-ball FBGA | [DATA_NEEDED: exact FBGA package code and body size] |
| 安裝類型 | Surface Mount | Surface Mount |
| Memory Format | DRAM (volatile) | DRAM |
| Packaging | Tray | Tray |
| 生命週期狀態 | Active | Active |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | unknown |
| Unit Price | [DATA_NEEDED: unit price] | — |
| 供應電壓 | — | 1.1 V |
| 介面 | — | Parallel |
| Technology | — | DRAM DDR5 |
| Volatile / Non-Volatile | — | Volatile |
| Application Segment | — | Industrial |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |