K4RBH086VB-BCQK vs K4RAH086VP-BCWM 比較

詳細並排比較 K4RBH086VB-BCQK 由 Samsung Electronics 與 K4RAH086VP-BCWM 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Samsung Electronics
K4RBH086VB-BCQK K4RBH086VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

K4RBH086VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

K4RBH086VB-BCQK ✓ 啟用中
Samsung Electronics
K4RAH086VP-BCWM K4RAH086VP-BCWM - 16Gb DDR5 5600Mbps DRAM | Samsung

K4RAH086VP-BCWM - 16Gb DDR5 5600Mbps DRAM | Samsung

K4RAH086VP-BCWM ✓ 啟用中

規格比較

參數 K4RBH086VB-BCQK K4RAH086VP-BCWM
品牌 Samsung Electronics Samsung Electronics
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR5 SDRAM DDR5 SDRAM
Density 16 Gb —
組織 2G x 8 —
資料速率 4800 Mbps 5600 Mbps/pin
Supply Voltage (VDD) 1.1 V —
介面 DDR5 (CA bus, ODECC) Parallel
On-die ECC Yes —
封裝 FBGA-82 [DATA_NEEDED: exact FBGA package code and body size]
安裝類型 Surface Mount Surface Mount
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Refresh [DATA_NEEDED: refresh rate 32ms/64ms] —
CAS Latency (CL) [DATA_NEEDED: CAS latency at 4800 Mbps] —
Power Supply Rails VDD/VDDQ 1.1 V (PMIC on module) —
MSL 等級 [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: moisture sensitivity level]
RoHS 狀態 Compliant unknown
Packaging [DATA_NEEDED: tray or tape and reel standard quantity] Tray
記憶體容量 — 16 Gb
Memory Organization — 2G x 8
供應電壓 — 1.1 V
Technology — DRAM DDR5
Memory Format — DRAM
Volatile / Non-Volatile — Volatile
Application Segment — Industrial
生命週期狀態 — Active

資料表與資源

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