K4RBH086VB-BCWM vs K4RBH165VB-BCQK 比較
詳細並排比較 K4RBH086VB-BCWM 由 Samsung Electronics 與 K4RBH165VB-BCQK 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4RBH086VB-BCWM | K4RBH165VB-BCQK |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | — |
| 組織 | 2G x 8 | 1G x 16 |
| 供應電壓 | 1.1 V | [DATA_NEEDED: core supply voltage (VDD), nominally 1.1 V for DDR5] |
| 資料速率 | [DATA_NEEDED: data rate for K4RBH speed grade (sister K4RAH086VB grade is 5600 Mbps)] | 4800 Mbps/pin |
| 介面 | Parallel, DDR5 | — |
| 封裝 | 82-FBGA | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | 0 C to 85 C | 0 C to +85 C |
| Product Status | Mass Production | — |
| Memory Format | Volatile (DRAM) | — |
| Technology | DDR5 SDRAM | — |
| Manufacturer | Samsung Semiconductor | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| On-Die ECC | Yes (per JEDEC DDR5 specification) | — |
| 記憶體容量 | — | 16 Gb |
| Speed Grade | — | BCQK (4800 Mbps) |
| Self Refresh | — | Auto self-refresh |
| Reset Function | — | Asynchronous reset |
| Error Correction | — | On-chip (on-die) ECC |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Package Type | — | [DATA_NEEDED: exact package code, expected FBGA surface mount] |
| Burst Length | — | [DATA_NEEDED: burst length (BL16 per DDR5 standard)] |