K4RCH046VM-2CCM vs K4RCH046VM-2CLP 比較

詳細並排比較 K4RCH046VM-2CCM 由 Samsung Electronics 與 K4RCH046VM-2CLP 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Samsung Electronics
K4RCH046VM-2CCM K4RCH046VM-2CCM - DDR5 32Gb 5600Mbps DRAM | Samsung

K4RCH046VM-2CCM - DDR5 32Gb 5600Mbps DRAM | Samsung

K4RCH046VM-2CCM Nrnd
Samsung Electronics
K4RCH046VM-2CLP K4RCH046VM-2CLP - 32Gb DDR5 SDRAM 6400Mbps | Samsung

K4RCH046VM-2CLP - 32Gb DDR5 SDRAM 6400Mbps | Samsung

K4RCH046VM-2CLP ✓ 啟用中

規格比較

參數 K4RCH046VM-2CCM K4RCH046VM-2CLP
品牌 Samsung Electronics Samsung Electronics
類別 Memory ICs Memory ICs
生命週期狀態 NRND 啟用中
記憶體類型 DDR5 SDRAM DDR5 SDRAM
Density 32 Gb 32 Gb
組織 4G x 4 4G x 4
資料速率 5600 Mbps 6400 Mbps
供應電壓 1.1 V 1.1 V
工作溫度 0 to 85 C 0C to 85C
封裝 78-ball FBGA 78-FBGA
安裝類型 Surface Mount Surface Mount
Product Status Sample —
Access Latency (CL) [DATA_NEEDED: CAS latency] —
Refresh Rate [DATA_NEEDED: refresh rate] —
介面類型 [DATA_NEEDED: interface type] —
MSL 等級 [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: moisture sensitivity level]
RoHS 狀態 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
On-Die ECC [DATA_NEEDED: on-die ECC support] —
Configuration — x4 component
介面 — DDR5 (SSTL-style low-voltage signaling)
Family Speed Range (Samsung DDR5) — up to 7200 Mbps
Family Density Range (Samsung DDR5) — 16 Gb to 32 Gb
Power Efficiency vs DDR4 — Approx. 30% greater
Product Status (per distributor listing) — Sample / Active supply via distribution

資料表與資源

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