K4RHE165VB-BCWM vs K4RCH046VM-2CLP 比較
詳細並排比較 K4RHE165VB-BCWM 由 Samsung Electronics 與 K4RCH046VM-2CLP 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4RHE165VB-BCWM | K4RCH046VM-2CLP |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR5 SDRAM | DDR5 SDRAM |
| Density | 24 Gb | 32 Gb |
| 組織 | 1G x 16 | 4G x 4 |
| 資料速率 | 5600 Mbps | 6400 Mbps |
| 供應電壓 | 1.1 V | 1.1 V |
| 封裝 | 106 FBGA | 78-FBGA |
| 工作溫度 | 0 C to +85 C | 0C to 85C |
| Product Status | Mass Production | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 介面 | Parallel, DDR5 | DDR5 (SSTL-style low-voltage signaling) |
| Generation | DDR5 | — |
| Application Segment | DDR5 memory modules and HPC systems | — |
| Speed Grade Suffix | BCWM | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| tCK (Clock Period) | [DATA_NEEDED: clock period] | — |
| CAS 延遲 | [DATA_NEEDED: CAS latency] | — |
| Configuration | — | x4 component |
| Family Speed Range (Samsung DDR5) | — | up to 7200 Mbps |
| Family Density Range (Samsung DDR5) | — | 16 Gb to 32 Gb |
| Power Efficiency vs DDR4 | — | Approx. 30% greater |
| Product Status (per distributor listing) | — | Sample / Active supply via distribution |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |