K9ADGD8S0A vs K9PKGY8S7M-CCK0 比較
詳細並排比較 K9ADGD8S0A 由 Samsung Electronics 與 K9PKGY8S7M-CCK0 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K9ADGD8S0A | K9PKGY8S7M-CCK0 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | EEPROM | Memory ICs |
| 生命週期狀態 | 停產終止 | 啟用中 |
| Device Type | 3D V-NAND flash memory bare die | — |
| Process Technology | Terabit Cell Array Transistor (TCAT) | — |
| Architecture | 3D vertical NAND (V-NAND) | — |
| Form Factor | Bare die (unpackaged) | — |
| Found In | Samsung K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 packages | — |
| Known Application | Samsung 850 Pro 128 GB SSD | — |
| Memory Class | Non-volatile NAND flash | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Documented By | TechInsights report SAR-1407-802 | — |
| Capacity | [DATA_NEEDED: die capacity] | — |
| 供應電壓 | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: supply voltage] |
| 介面 | [DATA_NEEDED: interface type] | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | [DATA_NEEDED: P/E cycle endurance] |
| 工作溫度 | [DATA_NEEDED: operating temperature] | [DATA_NEEDED: operating temperature range] |
| 封裝 | [DATA_NEEDED: package] | BGA |
| Memory Capacity | — | 128 Gb (16 GB) |
| 記憶體類型 | — | NAND Flash |
| Cell Architecture | — | 3D V-NAND, MLC (2 bits/cell) |
| V-NAND Layers | — | 24 layers |
| 安裝類型 | — | Surface Mount |
| Block Size | — | [DATA_NEEDED: block size] |
| RoHS 狀態 | — | Lead free / RoHS compliant |
| Application Domain | — | Enterprise SSD (e.g., Samsung 845DC Pro) |
| Access Time (tR) | — | [DATA_NEEDED: read cycle time] |
| Data Retention | — | [DATA_NEEDED: retention specification] |