K9ADGD8S0A vs K9PKGY8S7M-CCK0 مقایسه
مقایسه دقیق کنار به کنار K9ADGD8S0A توسط Samsung Electronics و K9PKGY8S7M-CCK0 توسط Samsung Electronics. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
مقایسه مشخصات
| پارامتر | K9ADGD8S0A | K9PKGY8S7M-CCK0 |
|---|---|---|
| برند | Samsung Electronics | Samsung Electronics |
| دسته‌بندی | EEPROM | Memory ICs |
| وضعیت چرخه عمر | پایان عمر محصول | فعال |
| Device Type | 3D V-NAND flash memory bare die | — |
| Process Technology | Terabit Cell Array Transistor (TCAT) | — |
| Architecture | 3D vertical NAND (V-NAND) | — |
| Form Factor | Bare die (unpackaged) | — |
| Found In | Samsung K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 packages | — |
| Known Application | Samsung 850 Pro 128 GB SSD | — |
| Memory Class | Non-volatile NAND flash | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Documented By | TechInsights report SAR-1407-802 | — |
| Capacity | [DATA_NEEDED: die capacity] | — |
| ولتاژ تغذیه | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: supply voltage] |
| رابط | [DATA_NEEDED: interface type] | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | [DATA_NEEDED: P/E cycle endurance] |
| دمای کاری | [DATA_NEEDED: operating temperature] | [DATA_NEEDED: operating temperature range] |
| بسته‌بندی | [DATA_NEEDED: package] | BGA |
| Memory Capacity | — | 128 Gb (16 GB) |
| نوع حافظه | — | NAND Flash |
| Cell Architecture | — | 3D V-NAND, MLC (2 bits/cell) |
| V-NAND Layers | — | 24 layers |
| نوع نصب | — | Surface Mount |
| Block Size | — | [DATA_NEEDED: block size] |
| وضعیت RoHS | — | Lead free / RoHS compliant |
| Application Domain | — | Enterprise SSD (e.g., Samsung 845DC Pro) |
| Access Time (tR) | — | [DATA_NEEDED: read cycle time] |
| Data Retention | — | [DATA_NEEDED: retention specification] |