K9DVGY8J5M vs K9ADGD8S0A 比較
詳細並排比較 K9DVGY8J5M 由 Samsung Electronics 與 K9ADGD8S0A 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K9DVGY8J5M | K9ADGD8S0A |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | EEPROM |
| 生命週期狀態 | 啟用中 | 停產終止 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | Raw NAND Flash Memory | — |
| NAND Technology | Samsung V-NAND (3D TLC) | — |
| Flash ID | EC519A3F8CCB | — |
| Density | [DATA_NEEDED: die density (Gb)] | — |
| Organization (Page/Block) | [DATA_NEEDED: page and block organization] | — |
| 介面類型 | [DATA_NEEDED: interface (toggle DDR / async)] | — |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC voltage] | — |
| Supply Voltage (VCCQ) | [DATA_NEEDED: VCCQ voltage] | — |
| Program Page Time (tPROG) | [DATA_NEEDED: tPROG typical/us] | — |
| Block Erase Time (tBERS) | [DATA_NEEDED: tBERS typical/us] | — |
| Read Time (tR) | [DATA_NEEDED: tR typical/us] | — |
| Program/Erase Endurance | [DATA_NEEDED: P/E cycle endurance] | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature] |
| Package Type | [DATA_NEEDED: package type and dimensions] | — |
| 安裝類型 | Surface Mount | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | — |
| Device Type | — | 3D V-NAND flash memory bare die |
| Process Technology | — | Terabit Cell Array Transistor (TCAT) |
| Architecture | — | 3D vertical NAND (V-NAND) |
| Form Factor | — | Bare die (unpackaged) |
| Found In | — | Samsung K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 packages |
| Known Application | — | Samsung 850 Pro 128 GB SSD |
| Memory Class | — | Non-volatile NAND flash |
| Documented By | — | TechInsights report SAR-1407-802 |
| Capacity | — | [DATA_NEEDED: die capacity] |
| 供應電壓 | — | [DATA_NEEDED: supply voltage] |
| 介面 | — | [DATA_NEEDED: interface type] |
| Page Size | — | [DATA_NEEDED: page size] |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance] |
| 封裝 | — | [DATA_NEEDED: package] |