K9DVGY8J5M vs K9PRGY8S7M 比較
詳細並排比較 K9DVGY8J5M 由 Samsung Electronics 與 K9PRGY8S7M 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K9PRGY8S7M - Samsung NAND Flash Memory IC | Samsung Electronics
K9PRGY8S7M ✓ 啟用中規格比較
| 參數 | K9DVGY8J5M | K9PRGY8S7M |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | Raw NAND Flash Memory | — |
| NAND Technology | Samsung V-NAND (3D TLC) | — |
| Flash ID | EC519A3F8CCB | — |
| Density | [DATA_NEEDED: die density (Gb)] | [DATA_NEEDED: density] |
| Organization (Page/Block) | [DATA_NEEDED: page and block organization] | — |
| 介面類型 | [DATA_NEEDED: interface (toggle DDR / async)] | [DATA_NEEDED: interface type] |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC voltage] | — |
| Supply Voltage (VCCQ) | [DATA_NEEDED: VCCQ voltage] | — |
| Program Page Time (tPROG) | [DATA_NEEDED: tPROG typical/us] | — |
| Block Erase Time (tBERS) | [DATA_NEEDED: tBERS typical/us] | — |
| Read Time (tR) | [DATA_NEEDED: tR typical/us] | — |
| Program/Erase Endurance | [DATA_NEEDED: P/E cycle endurance] | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature] |
| Package Type | [DATA_NEEDED: package type and dimensions] | BGA (surface mount) |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| 記憶體類型 | — | NAND Flash |
| 組織 | — | [DATA_NEEDED: organization] |
| 供應電壓 | — | [DATA_NEEDED: supply voltage] |
| Page Size | — | [DATA_NEEDED: page size] |
| Block Size | — | [DATA_NEEDED: block size] |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E cycles] |
| Access Time | — | [DATA_NEEDED: access time] |
| Package Pin/Ball Count | — | [DATA_NEEDED: ball count] |
| MSL 等級 | — | [DATA_NEEDED: MSL level] |