K9DVGY8J5M vs K9PRGY8S7M 对比
详细并排对比 K9DVGY8J5M 出自 Samsung Electronics 和 K9PRGY8S7M 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K9PRGY8S7M - Samsung NAND Flash Memory IC | Samsung Electronics
K9PRGY8S7M ✓ 量产中规格对比
| 参数 | K9DVGY8J5M | K9PRGY8S7M |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.00 | $0.00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | Raw NAND Flash Memory | — |
| NAND Technology | Samsung V-NAND (3D TLC) | — |
| Flash ID | EC519A3F8CCB | — |
| Density | [DATA_NEEDED: die density (Gb)] | [DATA_NEEDED: density] |
| Organization (Page/Block) | [DATA_NEEDED: page and block organization] | — |
| 接口类型 | [DATA_NEEDED: interface (toggle DDR / async)] | [DATA_NEEDED: interface type] |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC voltage] | — |
| Supply Voltage (VCCQ) | [DATA_NEEDED: VCCQ voltage] | — |
| Program Page Time (tPROG) | [DATA_NEEDED: tPROG typical/us] | — |
| Block Erase Time (tBERS) | [DATA_NEEDED: tBERS typical/us] | — |
| Read Time (tR) | [DATA_NEEDED: tR typical/us] | — |
| Program/Erase Endurance | [DATA_NEEDED: P/E cycle endurance] | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature] |
| Package Type | [DATA_NEEDED: package type and dimensions] | BGA (surface mount) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| 存储器类型 | — | NAND Flash |
| 存储组织 | — | [DATA_NEEDED: organization] |
| 电源电压 | — | [DATA_NEEDED: supply voltage] |
| Page Size | — | [DATA_NEEDED: page size] |
| Block Size | — | [DATA_NEEDED: block size] |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E cycles] |
| Access Time | — | [DATA_NEEDED: access time] |
| Package Pin/Ball Count | — | [DATA_NEEDED: ball count] |
| MSL 等级 | — | [DATA_NEEDED: MSL level] |