K9DVGY8J5M vs K9PRGY8S7M 比較
詳細な並列比較: K9DVGY8J5M メーカー: Samsung Electronics および K9PRGY8S7M メーカー: Samsung Electronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Samsung Electronics
K9PRGY8S7M - Samsung NAND Flash Memory IC | Samsung Electronics
K9PRGY8S7M ✓ 生産中仕様比較
| パラメータ | K9DVGY8J5M | K9PRGY8S7M |
|---|---|---|
| ブランド | Samsung Electronics | Samsung Electronics |
| カテゴリ | Memory ICs | Memory ICs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.00 | $0.00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | Raw NAND Flash Memory | — |
| NAND Technology | Samsung V-NAND (3D TLC) | — |
| Flash ID | EC519A3F8CCB | — |
| Density | [DATA_NEEDED: die density (Gb)] | [DATA_NEEDED: density] |
| Organization (Page/Block) | [DATA_NEEDED: page and block organization] | — |
| インターフェースタイプ | [DATA_NEEDED: interface (toggle DDR / async)] | [DATA_NEEDED: interface type] |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC voltage] | — |
| Supply Voltage (VCCQ) | [DATA_NEEDED: VCCQ voltage] | — |
| Program Page Time (tPROG) | [DATA_NEEDED: tPROG typical/us] | — |
| Block Erase Time (tBERS) | [DATA_NEEDED: tBERS typical/us] | — |
| Read Time (tR) | [DATA_NEEDED: tR typical/us] | — |
| Program/Erase Endurance | [DATA_NEEDED: P/E cycle endurance] | — |
| 動作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature] |
| Package Type | [DATA_NEEDED: package type and dimensions] | BGA (surface mount) |
| 実装タイプ | Surface Mount | Surface Mount |
| RoHS ステータス | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| メモリタイプ | — | NAND Flash |
| メモリ構成 | — | [DATA_NEEDED: organization] |
| 電源電圧 | — | [DATA_NEEDED: supply voltage] |
| Page Size | — | [DATA_NEEDED: page size] |
| Block Size | — | [DATA_NEEDED: block size] |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E cycles] |
| Access Time | — | [DATA_NEEDED: access time] |
| Package Pin/Ball Count | — | [DATA_NEEDED: ball count] |
| MSLレベル | — | [DATA_NEEDED: MSL level] |