K9HQGY8S5M vs K9DVGY8J5M 比較

詳細並排比較 K9HQGY8S5M 由 Samsung Electronics 與 K9DVGY8J5M 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Samsung Electronics
K9HQGY8S5M K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage

K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage

K9HQGY8S5M ✓ 啟用中
Samsung Electronics
K9DVGY8J5M K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M ✓ 啟用中

規格比較

參數 K9HQGY8S5M K9DVGY8J5M
品牌 Samsung Electronics Samsung Electronics
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
Manufacturer Samsung Electronics Samsung Electronics
Product Type 3D V-NAND Flash Memory (stacked, client NAND) Raw NAND Flash Memory
Package Type 316-ball Fine Pitch BGA (FBGA-316) [DATA_NEEDED: package type and dimensions]
Die Configuration 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis) —
NAND Technology 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis) Samsung V-NAND (3D TLC)
Memory Class Non-volatile NAND flash —
介面 NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode] —
Density [DATA_NEEDED: total bit density] [DATA_NEEDED: die density (Gb)]
供應電壓 [DATA_NEEDED: VCC range] —
Page Size [DATA_NEEDED: page size] —
Block Size [DATA_NEEDED: block size] —
Program/Erase Cycles [DATA_NEEDED: P/E endurance rating] —
安裝類型 Surface Mount (BGA) Surface Mount
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
RoHS 狀態 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
MSL 等級 [DATA_NEEDED: moisture sensitivity level] —
Original Application Samsung SSD 850 Pro solid-state drive —
Flash ID — EC519A3F8CCB
Organization (Page/Block) — [DATA_NEEDED: page and block organization]
介面類型 — [DATA_NEEDED: interface (toggle DDR / async)]
Supply Voltage (VCC) — [DATA_NEEDED: VCC voltage]
Supply Voltage (VCCQ) — [DATA_NEEDED: VCCQ voltage]
Program Page Time (tPROG) — [DATA_NEEDED: tPROG typical/us]
Block Erase Time (tBERS) — [DATA_NEEDED: tBERS typical/us]
Read Time (tR) — [DATA_NEEDED: tR typical/us]
Program/Erase Endurance — [DATA_NEEDED: P/E cycle endurance]

資料表與資源

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