K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage
MPN： K9HQGY8S5M ✓ 啟用中K9HQGY8S5M 概覽
NAND flash is a non-volatile memory technology that retains data without power and forms the storage hierarchy layer beneath DRAM and above permanent media in computing systems. Within that hierarchy, V-NAND (vertical NAND) stacks memory cells vertically rather than shrinking cells laterally, increasing bit density while improving endurance and write performance compared to planar NAND.
Key characteristics of the K9HQGY8S5M include its multi-die stacked architecture (four K9ADGD8S0A dies per package), 316-ball FBGA surface-mount packaging, and its use of 32-layer pMLC (premium multi-level cell / charge-trap 3D NAND) technology as reported in the Samsung 850 Pro 256 GB SSD teardowns. The pMLC 3D V-NAND used in the 850 Pro delivers substantially higher program/erase endurance than contemporary planar TLC NAND, which is why Samsung selected it for its flagship endurance-focused SSD line.
The device communicates over a standard ONFI-style NAND interface with the SSD controller (in the 850 Pro, the Samsung MEX / S4LN045X01 controller), supporting page-read, page-program, block-erase, and multi-plane operations typical of toggle/ONFI NAND families. Multiple dies within the package enable multi-die interleaving for higher effective bandwidth.
Typical applications include enterprise and client SSD storage modules, embedded storage assemblies, storage research, and board-level repair or component-level recovery of Samsung 850 Pro drives. The device is also used in reverse-engineering and package-analysis studies of 3D NAND stacking techniques.
Design consideration: because this is a component-sourcing (client) NAND part rather than a cataloged standard-product NAND, designers should validate ONFI/toggle timing compatibility and die configuration against the actual firmware environment before substitution; ballout documentation is not publicly released by Samsung.
This page synthesizes distributor sourcing channels, package-analysis findings, and drop-in alternative context not found in any single datasheet.
直接替換替代品，適用於 K9HQGY8S5M — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： K9HQGY8S5M （相同外形與佔位） — 差異在於 Memory Type, Product Family, Product Type, Mounting Type, RoHS Status.
K9LPGY8S1M
✅ 直接替換📋 參考替代品（不在目錄中）
K9PRGY8S7M
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →K9HQGY8S5M 最大額定值與電氣特性
| Manufacturer | Samsung Electronics |
| Product Type | 3D V-NAND Flash Memory (stacked, client NAND) |
| Package Type | 316-ball Fine Pitch BGA (FBGA-316) |
| Die Configuration | 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis) |
| NAND Technology | 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis) |
| Memory Class | Non-volatile NAND flash |
| 安裝類型 | Surface Mount (BGA) |
| Original Application | Samsung SSD 850 Pro solid-state drive |
K9HQGY8S5M 316-ball fine pitch bga (fbga-316) 腳位配置指南
K9HQGY8S5M（316-ball fine pitch bga (fbga-316) 封裝）的腳位配置。 此數位 IC 包含 GPIO、通訊介面（UART、SPI、I2C）與電源腳位。替代腳位功能與配置選項請參閱製造商資料表。對嵌入式系統設計與 PCB 佈局至關重要。
無詳細腳位定義資料： K9HQGY8S5M.
請參閱 資料表 以查看完整腳位配置。
典型應用
K9HQGY8S5M 適用於 6 應用s: Samsung SSD 850 Pro Storage, NAND Package Analysis and Reverse Engineering, Board-Level SSD Repair Services, Data Recovery and Chip-Off Forensics, Embedded Storage Prototyping, Enterprise Storage Long-Tail Maintenance.
Samsung SSD 850 Pro Storage
The K9HQGY8S5M is the original NAND component of the Samsung SSD 850 Pro 256 GB, paired with the Samsung MEX (S4LN045X01) SATA 6 Gbps controller and external DRAM cache. Its 32-layer pMLC 3D V-NAND technology was chosen by Samsung specifically for the 850 Pro's endurance-focused positioning: charge-trap 3D cells exhibit lower cell-to-cell interference than planar TLC, allowing higher program/erase endurance. In the drive, multiple dies inside each 316-ball FBGA are interleaved by the controller to raise effective bandwidth. Technicians performing board-level repair or component recovery on 850 Pro drives work directly with this package, requiring reball-and-reflow BGA equipment. Controller translation-table metadata resides in the NAND, so chip-off reading rather than NAND replacement is preferred for data recovery.
推薦
NAND Package Analysis and Reverse Engineering
The K9HQGY8S5M serves as a reference device for package-analysis studies of early 3D NAND stacking. TechInsights report pkg-1407-802 documents its 316-ball FBGA construction and four-die K9ADGD8S0A stacking, and REATISS performed process analysis on the same device. Labs use such parts to study die-attach methods, through-silicon-via or wire-bond stacking schemes, charge-trap cell structure, and process nodes of first-generation vertical NAND. The value of this device for analysis is that its provenance (850 Pro) and die identity are fully documented, making cross-lab comparisons reproducible. For this use, decapsulation, delayering, and SEM/TEM imaging workflows are typical, and the part's known pMLC 32-layer technology provides a calibration reference against later-generation V-NAND devices.
推薦
Board-Level SSD Repair Services
Independent repair shops use the K9HQGY8S5M to replace failed NAND packages on Samsung 850 Pro PCBs. The 316-ball FBGA requires precision reballing stencils, controlled-profile reflow, and post-repair controller re-initialization. Because the 850 Pro's MEX controller stores FTL (flash translation layer) metadata in NAND, a replaced package changes the drive's mapping data; successful repair therefore typically involves pairing replacement NAND with the original controller state or accepting a fresh low-level format. Stock from brokers such as OMO Electronic and IC2IC enables same-week repair turnaround versus months of factory service. Shops should match date codes across all NAND packages in the drive where possible to minimize timing variance across channels.
推薦
Data Recovery and Chip-Off Forensics
Forensic and data-recovery labs remove the K9HQGY8S5M from 850 Pro drives via hot-air or infrared BGA rework, then read the four internal K9ADGD8S0A dies on dedicated NAND readers. Because the package stacks four dies, the reader must address each die target independently, and controller-scrambled data (XOR interleaving and scrambling keys managed by the MEX controller) must be reversed before file-system reconstruction. The known 32-layer pMLC cell characteristics help labs set correct read-retry voltage thresholds for worn cells. As of 2026-09-04, this part remains a common specimen in 850 Pro recovery jobs because the 850 Pro retains a large installed base of endurance-sensitive enterprise and prosumer users.
推薦
Embedded Storage Prototyping
Universities and storage-controller startups use recovered K9HQGY8S5M packages to prototype NAND controller firmware against real first-generation 3D V-NAND silicon. Its asynchronous NAND-style interface lets engineers exercise ONFI/Toggle command sequences, multi-die interleaving, and plane operations without waiting for cataloged NAND supply. The engineering caveat is that Samsung never published the ballout or AC timing tables for this client part, so teams derive pin maps from 850 Pro schematic references and validate timing empirically with scope measurements. This makes the device best suited to research and education rather than production designs, where published-spec catalog NAND remains the appropriate choice for new embedded products.
推薦
Enterprise Storage Long-Tail Maintenance
Organizations maintaining fleets of Samsung 850 Pro-based storage maintain small K9HQGY8S5M inventories as spares for solder-down repair of out-of-warranty drives. The pMLC V-NAND's endurance advantage over planar TLC made the 850 Pro a popular enterprise-client drive, so spares demand persists years after the product's retail lifecycle. Procurement teams source through brokers (OMO Electronic, Kynix, IC2IC) with incoming inspection for date-code matching, counterfeit screening, and ball-condition checks. As of 2026-09-04 stock is available with immediate shipment, but buyers should qualify multiple brokers since Samsung's authorized channel no longer carries this client NAND generation.
推薦
推薦產品摘要
工程參考資料，適用於 K9HQGY8S5M — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | K9LPGY8S1M | K9PRGY8S7M |
|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| NAND Technology | 32-layer pMLC 3D V-NAND | 3D V-NAND (same first generation) | Later-generation 3D V-NAND |
| Original Platform | Samsung SSD 850 Pro | Samsung SSD 850 Pro platform | Current V-NAND product line |
| Availability Channel | Independent brokers (in stock, as of 2026-09-04) | Independent brokers / teardown sources | XAIPART product page available |
主要差異化特點
- First-generation 32-layer pMLC 3D V-NAND with documented provenance (對比K9LPGY8S1M)
- Endurance-oriented pMLC cell technology (對比K9PRGY8S7M)
- Exact-fit repair part for Samsung 850 Pro (對比K9LPGY8S1M)
設計說明
Do not treat the K9HQGY8S5M as a cataloged standard-product NAND: Samsung publishes no ballout, AC timing, or density documentation for this client part. All public technical knowledge derives from the TechInsights package analysis (pkg-1407-802) and 850 Pro teardowns. Any design-in requires empirical timing validation and a pin map derived from the 850 Pro reference layout. Severity: critical for anyone attempting new designs with broker-sourced parts.
The 316-ball fine-pitch BGA demands controlled reflow (lead-free profile recommended) and matching fanout as used on the Samsung 850 Pro PCB. For repair work, use a dedicated reballing stencil for the 316-ball pattern and verify coplanarity before placement. Estimated: BGA rework on a 4-die stacked package is more heat-sensitive than single-die NAND, so a gentler preheat ramp is advisable to avoid die-attach delamination.
When reusing or emulating the 850 Pro interface, follow Samsung MEX controller routing practices: length-match the NAND data bus within tight skew budgets and keep CE/RLE/WRE control lines short. The four stacked K9ADGD8S0A dies share the package ball interface, so die-select (CE) timing and interleaved command sequencing must match controller firmware expectations; mismatched timing typically manifests as read-retry failures rather than hard errors.
合規資訊
No compliance documentation was found in the provided verified web data for this client NAND component. Confirm RoHS/REACH status with the broker or Samsung directly before design-in.
