K9LUGY8J7D-CCK0 vs K9JUGY8J5C-BCK0 比較
詳細並排比較 K9LUGY8J7D-CCK0 由 Samsung Electronics 與 K9JUGY8J5C-BCK0 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K9LUGY8J7D-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics
K9LUGY8J7D-CCK0 ✓ 啟用中規格比較
| 參數 | K9LUGY8J7D-CCK0 | K9JUGY8J5C-BCK0 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Flash |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Samsung Electronics | — |
| 記憶體類型 | NAND Flash (V-NAND) | NAND Flash (V-NAND TLC) |
| Memory Cell Type | TLC (Triple-Level Cell) | — |
| Technology | V-NAND (vertical NAND) | Samsung V-NAND (3D) |
| 封裝 | BGA (surface mount) | [DATA_NEEDED: FBGA ball count / package code] |
| 安裝類型 | Surface Mount | Surface Mount |
| 介面 | [DATA_NEEDED: interface type / toggle DDR mode] | [DATA_NEEDED: async/DDR or Toggle DDR interface and mode] |
| Density | [DATA_NEEDED: total density (bits)] | 1 Tb |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| 供應電壓 | [DATA_NEEDED: supply voltage (V)] | — |
| 工作溫度 | [DATA_NEEDED: temperature range (C)] | [DATA_NEEDED: operating temperature range] |
| Program/Erase Endurance | [DATA_NEEDED: P/E cycles] | — |
| Data Retention | [DATA_NEEDED: retention] | [DATA_NEEDED: retention specification] |
| Speed Grade Code | CCK0 (per Samsung part-number convention) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Compliant |
| Cell Type | — | Triple-Level Cell (TLC) |
| 組織 | — | [DATA_NEEDED: page/block organization] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ range] |
| Program Time (typ) | — | [DATA_NEEDED: tPROG] |
| Read Time (typ) | — | [DATA_NEEDED: tR] |
| Endurance (P/E cycles) | — | [DATA_NEEDED: program/erase endurance] |