K9LUGY8J7D-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics
MPN： K9LUGY8J7D-CCK0 ✓ 啟用中K9LUGY8J7D-CCK0 概覽
NAND flash is a type of non-volatile memory that retains data without power and sits within the broader hierarchy of storage semiconductors: NAND flash -> solid-state storage -> memory IC -> semiconductor. TLC V-NAND stores three bits per cell using vertically stacked charge-trap layers, which dramatically increases bit density per wafer compared to planar NAND. Devices in this class are the core storage media for SSDs, embedded storage, and enterprise storage systems.
Key characteristics typical of this Samsung V-NAND generation include a high-speed toggle-mode DDR interface, ONFI-compatible command protocols, page and block-organized memory arrays, and end-of-life data retention managed through ECC-heavy controller designs. The BGA footprint enables compact board layout and automated reflow assembly.
This device is typically designed into solid-state drives (SSDs), embedded USB storage modules, memory cards, and industrial storage systems where high capacity per package is critical. Enterprise and datacenter storage arrays also use parts of this class for cost-per-TB optimization.
A critical design consideration is that TLC V-NAND must always be paired with a controller implementing strong ECC (LDPC), wear-leveling, and bad-block management; direct raw access without such management will cause data corruption over the rated program/erase endurance.
This page synthesizes drop-in same-family alternatives from the Samsung V-NAND cross-reference family, practical design notes, and application guidance not found in a single distributor listing.
直接替換替代品，適用於 K9LUGY8J7D-CCK0 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： K9LUGY8J7D-CCK0 （相同外形與佔位） — 差異在於 Memory Type, Cell Type, RoHS Status, Technology, Mounting Type.
K9LUGY8J7D-BCK0
✅ 直接替換聯絡詢價
查看資料表 →K9KUGY8J7C-CCK0
✅ 直接替換聯絡詢價
查看資料表 →K9KUGY8J7C-BCK0
✅ 直接替換聯絡詢價
查看資料表 →K9JUGY8J5C-CCK0
✅ 直接替換聯絡詢價
查看資料表 →K9JUGY8J5C-BCK0
✅ 直接替換聯絡詢價
查看資料表 →K9IUGY8J7B-CCK0
✅ 直接替換聯絡詢價
查看資料表 →K9HUGY8J5B-CCK0
✅ 直接替換聯絡詢價
查看資料表 →K9LUGY8J7D-CCK0 最大額定值與電氣特性
| Manufacturer | Samsung Electronics |
| 記憶體類型 | NAND Flash (V-NAND) |
| Memory Cell Type | TLC (Triple-Level Cell) |
| Technology | V-NAND (vertical NAND) |
| 封裝 | BGA (surface mount) |
| 安裝類型 | Surface Mount |
| Speed Grade Code | CCK0 (per Samsung part-number convention) |
K9LUGY8J7D-CCK0 bga (surface mount) 腳位配置指南
K9LUGY8J7D-CCK0（bga (surface mount) 封裝）的腳位配置。 此數位 IC 包含 GPIO、通訊介面（UART、SPI、I2C）與電源腳位。替代腳位功能與配置選項請參閱製造商資料表。對嵌入式系統設計與 PCB 佈局至關重要。
無詳細腳位定義資料： K9LUGY8J7D-CCK0.
請參閱 資料表 以查看完整腳位配置。
典型應用
K9LUGY8J7D-CCK0 適用於 6 應用s: Solid-State Drives (SSD), Embedded Storage (eMMC/UFS-class subsystems), Datacenter and Enterprise Storage, USB Flash Drive and Memory Card Products, Industrial and Rugged Storage, AIoT and Smart Camera Storage.
Solid-State Drives (SSD)
The K9LUGY8J7D-CCK0 serves as core non-volatile storage media in client and enterprise SSD designs. Samsung GY8-generation V-NAND TLC offers high bits-per-package density, which reduces the number of packages required per drive and lowers PCB area and BOM cost per terabyte. In an SSD, multiple V-NAND packages connect to a controller over toggle DDR channels; the CCK0 speed grade defines the timing envelope the controller must support. Strong LDPC ECC and wear-leveling in the controller are mandatory to meet rated program/erase endurance and data retention over the drive lifetime.
推薦
Embedded Storage (eMMC/UFS-class subsystems)
Designers of embedded storage modules use high-density TLC V-NAND such as the K9LUGY8J7D-CCK0 as the raw storage behind managed controllers in set-top boxes, smart displays, and industrial HMI equipment. The BGA package supports compact, reflow-assembled module layouts, and the high per-package density lets a small module reach large capacities with fewer NAND channels. Because raw NAND requires full firmware management (bad-block tables, ECC, garbage collection), pair this device with a controller firmware qualified for Samsung GY8-generation device IDs and timing (C-series speed code).
推薦
Datacenter and Enterprise Storage
Enterprise storage arrays and all-flash appliances deploy TLC V-NAND parts of this class to achieve competitive cost-per-TB while maintaining acceptable write endurance under datacenter workloads. The K9LUGY8J7D-CCK0, as a Samsung GY8-generation V-NAND device, provides the stacked-cell density needed to pack tens of terabytes into a single drive form factor. Enterprise deployments typically provision over-provisioning headroom and power-loss protection capacitors around the NAND rails, and qualify the exact CCK0 speed grade on the controller's firmware qualified-vendor list before volume commits.
推薦
USB Flash Drive and Memory Card Products
High-capacity USB flash drives and high-performance memory cards build on TLC V-NAND dies and packages of this Samsung family, where cost per gigabyte is the dominant design factor. The K9LUGY8J7D-CCK0's high density allows a single or few packages to deliver large capacities within the tight mechanical envelope of a card or stick. USB controller firmware must support the Samsung device ID and toggle-mode timings associated with the CCK0 code; sequential read/write performance is bounded by the number of NAND channels and the speed grade, so verify controller channel configuration against datasheet timing before committing.
推薦
Industrial and Rugged Storage
Industrial computers, transportation recorders, and ruggedized logging equipment use TLC V-NAND such as the K9LUGY8J7D-CCK0 inside industrial SD/CFast modules and BGA-down storage solutions, valuing vibration immunity of surface-mount BGA assembly over rotating media. Confirm the temperature grade encoded in the device suffix matches the industrial environment; if extended temperature is required, validate with Samsung that this specific speed/packaging code meets the target range. Controller firmware should implement periodic data refresh and power-fail resilience to protect retention and integrity in harsh duty cycles.
推薦
AIoT and Smart Camera Storage
AI camera nodes, smart doorbells, and edge video recorders require dense, power-efficient local storage for continuous video buffering and on-device analytics data. TLC V-NAND of the Samsung GY8 generation provides high capacity per package, letting compact edge boards store days of video or model artifacts locally. The K9LUGY8J7D-CCK0 interfaces through the host SoC or a dedicated NAND controller over toggle DDR; designers must budget for sequential write bandwidth of the CCK0 speed grade and implement cyclic overwrites plus health monitoring so sustained 24/7 recording stays within the rated endurance profile.
推薦
推薦產品摘要
工程參考資料，適用於 K9LUGY8J7D-CCK0 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | K9LUGY8J7D-BCK0 | K9KUGY8J7C-CCK0 | K9JUGY8J5C-CCK0 |
|---|---|---|---|---|
| Package | BGA (surface mount) | BGA - same | BGA - same family | BGA - same family |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Cell Type | TLC V-NAND | TLC V-NAND | TLC V-NAND | TLC V-NAND |
| Speed Grade Code | CCK0 | BCK0 | CCK0 | CCK0 |
| Lifecycle Status | Active (verify with Samsung) | Active | Active | Older generation - verify status |
主要差異化特點
- Latest C-series speed grade within the same die generation (對比K9LUGY8J7D-BCK0)
- Samsung V-NAND vertical stacking (對比K9HUGY8J5B-CCK0)
- Footprint compatibility across family speed grades (對比K9JUGY8J5C-BCK0)
設計說明
Treat the toggle DDR NAND channel of the K9LUGY8J7D-CCK0 as a controlled-impedance bus. Length-match data signals within the timing budget in the Samsung datasheet, maintain an unbroken ground reference plane under the bus, and series-terminate at the controller where recommended. Place the BGA close to the controller to minimize stub length; keep DQ/RE/CE routing away from switching regulator nodes to avoid coupling jitter into read timing margins.
Decouple every VCC and VCCQ ball of the BGA package with low-ESR ceramic capacitors placed adjacent to the ball via pairs. Use dedicated power planes for VCCQ (I/O) and VCC (core) with ferrite or PI filtering per Samsung's reference design guidance to reduce supply noise during simultaneous program operations, which draw high transient currents. Estimated: peak program current is highest when multiple dies program concurrently - size the regulator for worst-case multi-die concurrent program, not just average read current.
Never connect raw TLC V-NAND directly to a host without LDPC ECC, bad-block management, and wear-leveling firmware; TLC cells require strong error correction and the device ID/timing profile of the exact speed-grade code (CCK0) must be in the controller firmware's supported list. Also verify the reflow profile suits lead-free BGA balls, and confirm second-source substitutions (e.g., BCK0 vs CCK0) against controller qualified-vendor lists before mass production.
合規資訊
Compliance data was not present in the retrieved web data. Request Samsung material declaration sheets (MDS) and certificate of conformance from Samsung distribution for this exact MPN.
