K9PKGY8S7M-CCK0 vs K9PRGY8S7M 比較
詳細並排比較 K9PKGY8S7M-CCK0 由 Samsung Electronics 與 K9PRGY8S7M 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K9PRGY8S7M - Samsung NAND Flash Memory IC | Samsung Electronics
K9PRGY8S7M ✓ 啟用中規格比較
| 參數 | K9PKGY8S7M-CCK0 | K9PRGY8S7M |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Memory Capacity | 128 Gb (16 GB) | — |
| 記憶體類型 | NAND Flash | NAND Flash |
| Cell Architecture | 3D V-NAND, MLC (2 bits/cell) | — |
| V-NAND Layers | 24 layers | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| 封裝 | BGA | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 介面 | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) | — |
| 供應電壓 | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: supply voltage] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Program/Erase Cycles | [DATA_NEEDED: P/E cycle endurance] | [DATA_NEEDED: P/E cycles] |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature] |
| RoHS 狀態 | Lead free / RoHS compliant | [DATA_NEEDED: RoHS status] |
| Application Domain | Enterprise SSD (e.g., Samsung 845DC Pro) | — |
| Access Time (tR) | [DATA_NEEDED: read cycle time] | — |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| Density | — | [DATA_NEEDED: density] |
| 組織 | — | [DATA_NEEDED: organization] |
| 介面類型 | — | [DATA_NEEDED: interface type] |
| Access Time | — | [DATA_NEEDED: access time] |
| Package Type | — | BGA (surface mount) |
| Package Pin/Ball Count | — | [DATA_NEEDED: ball count] |
| MSL 等級 | — | [DATA_NEEDED: MSL level] |