K9PKGY8S7M-CCK0 vs K9PRGY8S7M 比較
詳細な並列比較: K9PKGY8S7M-CCK0 メーカー: Samsung Electronics および K9PRGY8S7M メーカー: Samsung Electronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Samsung Electronics
K9PRGY8S7M - Samsung NAND Flash Memory IC | Samsung Electronics
K9PRGY8S7M ✓ 生産中仕様比較
| パラメータ | K9PKGY8S7M-CCK0 | K9PRGY8S7M |
|---|---|---|
| ブランド | Samsung Electronics | Samsung Electronics |
| カテゴリ | Memory ICs | Memory ICs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $9.40 | $0.00 |
| Memory Capacity | 128 Gb (16 GB) | — |
| メモリタイプ | NAND Flash | NAND Flash |
| Cell Architecture | 3D V-NAND, MLC (2 bits/cell) | — |
| V-NAND Layers | 24 layers | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| パッケージ | BGA | — |
| 実装タイプ | Surface Mount | Surface Mount |
| インターフェース | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) | — |
| 電源電圧 | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: supply voltage] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Program/Erase Cycles | [DATA_NEEDED: P/E cycle endurance] | [DATA_NEEDED: P/E cycles] |
| 動作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature] |
| RoHS ステータス | Lead free / RoHS compliant | [DATA_NEEDED: RoHS status] |
| Application Domain | Enterprise SSD (e.g., Samsung 845DC Pro) | — |
| Access Time (tR) | [DATA_NEEDED: read cycle time] | — |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| Density | — | [DATA_NEEDED: density] |
| メモリ構成 | — | [DATA_NEEDED: organization] |
| インターフェースタイプ | — | [DATA_NEEDED: interface type] |
| Access Time | — | [DATA_NEEDED: access time] |
| Package Type | — | BGA (surface mount) |
| Package Pin/Ball Count | — | [DATA_NEEDED: ball count] |
| MSLレベル | — | [DATA_NEEDED: MSL level] |