K9PKGY8S7M-CCK0 vs K9PRGY8S7M 对比
详细并排对比 K9PKGY8S7M-CCK0 出自 Samsung Electronics 和 K9PRGY8S7M 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K9PRGY8S7M - Samsung NAND Flash Memory IC | Samsung Electronics
K9PRGY8S7M ✓ 量产中规格对比
| 参数 | K9PKGY8S7M-CCK0 | K9PRGY8S7M |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $9.40 | $0.00 |
| Memory Capacity | 128 Gb (16 GB) | — |
| 存储器类型 | NAND Flash | NAND Flash |
| Cell Architecture | 3D V-NAND, MLC (2 bits/cell) | — |
| V-NAND Layers | 24 layers | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| 封装 | BGA | — |
| 安装类型 | Surface Mount | Surface Mount |
| 接口 | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) | — |
| 电源电压 | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: supply voltage] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Program/Erase Cycles | [DATA_NEEDED: P/E cycle endurance] | [DATA_NEEDED: P/E cycles] |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature] |
| RoHS 状态 | Lead free / RoHS compliant | [DATA_NEEDED: RoHS status] |
| Application Domain | Enterprise SSD (e.g., Samsung 845DC Pro) | — |
| Access Time (tR) | [DATA_NEEDED: read cycle time] | — |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| Density | — | [DATA_NEEDED: density] |
| 存储组织 | — | [DATA_NEEDED: organization] |
| 接口类型 | — | [DATA_NEEDED: interface type] |
| Access Time | — | [DATA_NEEDED: access time] |
| Package Type | — | BGA (surface mount) |
| Package Pin/Ball Count | — | [DATA_NEEDED: ball count] |
| MSL 等级 | — | [DATA_NEEDED: MSL level] |