M29W400FT55N3E vs M29F400FT55N3E2 比較
詳細並排比較 M29W400FT55N3E 由 Micron Technology 與 M29F400FT55N3E2 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
M29F400FT55N3E2 - 4Mbit 5V Parallel NOR Flash, 55ns | Micron
M29F400FT55N3E2 ✓ 啟用中規格比較
| 參數 | M29W400FT55N3E | M29F400FT55N3E2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | Flash - NOR Memory IC | NOR Flash (Parallel) |
| 記憶體容量 | 4 Mbit | — |
| 介面 | Parallel | Parallel |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V (program, erase and read) | — |
| Sector Size | 16 KB, 8 KB, 32 KB, 64 KB (asymmetric boot-block) | — |
| Boot Block Position | Top (FT suffix) | — |
| 工作溫度 | -40C to +125C | [DATA_NEEDED: Operating Temperature Range] |
| Temperature Grade | Automotive | — |
| 封裝 | 48-TSOP I | 44-SO (SOP-44) |
| Number of Terminals | 48 | — |
| Package Code / Shape | TSSOP / Rectangular | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 濕度敏感等級 (MSL) | 3 (168 Hours) | — |
| Packaging | Tray | — |
| Peak Reflow Time | 30 s max | — |
| Companion Access-Time Grade | 55 ns and 70 ns versions available in family | — |
| Density | — | 4 Mbit (512K x 8) |
| 供應電壓 | — | 5 V (single supply) |
| Boot Block Architecture | — | Top boot (FT variant) |
| Programming Supply | — | No 12 V VPP required (5.0 V programming) |
| Command Set | — | JEDEC standard compatible |
| Program/Erase Endurance | — | [DATA_NEEDED: Program/Erase Cycles] |
| Data Retention | — | [DATA_NEEDED: Data Retention] |
| Active Read Current | — | [DATA_NEEDED: Active Current] |
| Standby Current | — | [DATA_NEEDED: Standby Current] |
| Block Protection | — | Hardware block protection |
| MSL 等級 | — | [DATA_NEEDED: Moisture Sensitivity Level] |
| RoHS 狀態 | — | [DATA_NEEDED: RoHS Status] |