M29W400FT55N3E vs M29W800FT70N3E 比較

詳細並排比較 M29W400FT55N3E 由 Micron Technology 與 M29W800FT70N3E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
M29W400FT55N3E M29W400FT55N3E - 4Mbit NOR Flash 55ns 48-TSOP | Micron

M29W400FT55N3E - 4Mbit NOR Flash 55ns 48-TSOP | Micron

M29W400FT55N3E ✓ 啟用中
Micron Technology
M29W800FT70N3E M29W800FT70N3E - 8Mbit 70ns Parallel NOR Flash | Micron

M29W800FT70N3E - 8Mbit 70ns Parallel NOR Flash | Micron

M29W800FT70N3E ✓ 啟用中

規格比較

參數 M29W400FT55N3E M29W800FT70N3E
品牌 Micron Technology Micron Technology
類別 Memory ICs Flash
生命週期狀態 啟用中 啟用中
記憶體類型 Flash - NOR Memory IC NOR Flash (Parallel)
記憶體容量 4 Mbit —
介面 Parallel Parallel, address/data bus
Access Time 55 ns 70 ns
Supply Voltage (VCC) 2.7 V to 3.6 V (program, erase and read) 2.7 V to 3.6 V
Sector Size 16 KB, 8 KB, 32 KB, 64 KB (asymmetric boot-block) —
Boot Block Position Top (FT suffix) —
工作溫度 -40C to +125C -40C to +125C
Temperature Grade Automotive —
封裝 48-TSOP I 48-TSOP I (12 x 20 mm, 0.5 mm pitch)
Number of Terminals 48 —
Package Code / Shape TSSOP / Rectangular —
安裝類型 Surface Mount Surface Mount
濕度敏感等級 (MSL) 3 (168 Hours) —
Packaging Tray —
Peak Reflow Time 30 s max —
Companion Access-Time Grade 55 ns and 70 ns versions available in family —
Density — 8 Mbit
組織 — 1M x 8 / 512K x 16
Programming / Erase Supply — Single supply at VCC (2.7 V to 3.6 V)
Boot Block Location — Top boot block (FT variant)
Bus Width — 8-bit or 16-bit (BYTE pin selectable)
Standby Current — [DATA_NEEDED: standby current]
Program/Erase Endurance — [DATA_NEEDED: program/erase cycles]
Data Retention — [DATA_NEEDED: data retention]
Block Organization — [DATA_NEEDED: block size/organization]
RoHS 狀態 — [DATA_NEEDED: RoHS status]

資料表與資源

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