M321R4GA3EB2-CWM vs M321R4GA0PB2-CCP 比較

詳細並排比較 M321R4GA3EB2-CWM 由 Samsung Electronics 與 M321R4GA0PB2-CCP 由 Samsung Electro-Mechanics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Samsung Electronics
M321R4GA3EB2-CWM M321R4GA3EB2-CWM - 32GB DDR5-5600 ECC RDIMM | Samsung

M321R4GA3EB2-CWM - 32GB DDR5-5600 ECC RDIMM | Samsung

M321R4GA3EB2-CWM ✓ 啟用中
Samsung Electro-Mechanics
M321R4GA0PB2-CCP M321R4GA0PB2-CCP - 32GB DDR5-6400 ECC RDIMM | Samsung

M321R4GA0PB2-CCP - 32GB DDR5-6400 ECC RDIMM | Samsung

M321R4GA0PB2-CCP ✓ 啟用中

規格比較

參數 M321R4GA3EB2-CWM M321R4GA0PB2-CCP
品牌 Samsung Electronics Samsung Electro-Mechanics
類別 EEPROM Memory ICs
生命週期狀態 啟用中 啟用中
庫存狀態 In Stock —
單價 (USD) $1,260.00 —
Memory Capacity 32 GB —
記憶體類型 DDR5 SDRAM ECC Registered (RDIMM) DDR5 SDRAM
資料速率 5600 MT/s (PC5-44800) —
Form Factor 288-pin RDIMM 288-pin DIMM
組織 2Rx8 (dual rank, x8) 4G x 72
Operating Voltage 1.1 V 1.1 V
CAS 延遲 CL46 CL52
DRAM Composition 20 x 2Gx8 FBGA DRAM components —
Ranks 2 —
Error Correction On-die ECC (ODECC) + registered parity/CRC —
DRAM Die E-die (12nm-class process) —
JEDEC Compliance JEDEC PC5-44800R compliant —
Module Supply 12 V input with on-module PMIC (1.1 V DRAM rail) —
Compatible Platforms Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, Supermicro DDR5 servers Dell, HPE, Lenovo ThinkSystem, Supermicro (Xeon / EPYC DDR5 platforms)
RoHS 狀態 Compliant —
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Peak Bandwidth Approx. 44.8 GB/s per module —
Capacity — 32 GB (1 x 32 GB)
Module Type — 288-pin RDIMM (ECC Registered)
Speed — 6400 MT/s (PC5-51200)
Configuration — 1Rx4 (single rank, x4)
DRAM Devices — 20 x 4G x 4 DDR5 DRAM, FBGA package
ECC — ECC Registered (on-die ECC + side-band)
Bandwidth — 51.2 GB/s peak (PC5-51200)
Rank — Single Rank
Compliance — 100% JEDEC compliant
GTIN / EAN — 4262552150022

資料表與資源

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