MMG3012NT1 vs MMG3011NT1 比較

詳細並排比較 MMG3012NT1 由 NXP Semiconductors 與 MMG3011NT1 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MMG3012NT1 MMG3012NT1 - 6 GHz, 19 dB InGaP HBT GPA RF Amplifier | NXP

MMG3012NT1 - 6 GHz, 19 dB InGaP HBT GPA RF Amplifier | NXP

MMG3012NT1 ✓ 啟用中
NXP Semiconductors
MMG3011NT1 MMG3011NT1 - 0-6 GHz, 15 dB Gain, 15 dBm InGaP HBT GPA | NXP

MMG3011NT1 - 0-6 GHz, 15 dB Gain, 15 dBm InGaP HBT GPA | NXP

MMG3011NT1 ✓ 啟用中

規格比較

參數 MMG3012NT1 MMG3011NT1
品牌 NXP Semiconductors NXP Semiconductors
類別 RF Amplifiers RF Amplifiers
生命週期狀態 啟用中 啟用中
Technology InGaP HBT (Heterojunction Bipolar Transistor) InGaP HBT (Heterojunction Bipolar Transistor)
功能 General Purpose RF Amplifier (GPA), Class A General-purpose amplifier (GPA)
Frequency Range 0 Hz to 6000 MHz (6 GHz) 0 Hz to 6000 MHz (0-6 GHz)
Small-Signal Gain 19 dB (typical, 900 MHz) 15 dB (typical)
Output P1dB 18.5 dBm (typical) —
Output IP3 (OIP3) [DATA_NEEDED: OIP3 value] —
Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
供應電流 [DATA_NEEDED: ICC typical] —
Input Match Internally matched to 50 ohms —
Output Match Internally matched to 50 ohms —
Operating Case Temperature -40 °C to +85 °C —
Storage Temperature -65 °C to +150 °C —
封裝 / 外殼 SOT-89-4 (TO-243AA), 4-pin surface mount —
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant [DATA_NEEDED: RoHS status not confirmed in retrieved snippets]
Lead-Free Yes [DATA_NEEDED: lead-free status not confirmed in retrieved snippets]
MSL 等級 [DATA_NEEDED: MSL rating] —
DC Blocking Required on RF input and output (DC-coupled pins) —
Manufacturer — NXP Semiconductors (formerly Freescale Semiconductor)
Output Power (P1dB) — 15 dBm (typical)
Operating Class — Class A
Input Matching — Internally matched to 50 ohms
Output Matching — Internally matched to 50 ohms
封裝 — SOT-89-4
Number of Terminals — 4
Package Body Material — Plastic/Epoxy
Construction — Component

資料表與資源

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