MRF5P21180HR5 vs MRF6P21190HR5 比較

詳細並排比較 MRF5P21180HR5 由 NXP Semiconductors 與 MRF6P21190HR5 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MRF5P21180HR5 MRF5P21180HR5 - 2170MHz, 38W W-CDMA RF LDMOS | NXP

MRF5P21180HR5 - 2170MHz, 38W W-CDMA RF LDMOS | NXP

MRF5P21180HR5 ✓ 啟用中
NXP Semiconductors
MRF6P21190HR5 MRF6P21190HR5 - 44W LDMOS RF Power Transistor 2.12GHz | NXP

MRF6P21190HR5 - 44W LDMOS RF Power Transistor 2.12GHz | NXP

MRF6P21190HR5 Obsolete

規格比較

參數 MRF5P21180HR5 MRF6P21190HR5
品牌 NXP Semiconductors NXP Semiconductors
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 Obsolete
Manufacturer NXP Semiconductors (formerly Freescale) —
Part Family MRF5P21180 —
電晶體類型 LDMOS (Laterally Diffused MOSFET), N-Channel LDMOS, N-Channel
Technology Lateral N-Channel RF Power MOSFET LDMOS (Laterally Diffused MOS)
Drain-Source Voltage (VDS) Rated 65 V —
Operating Drain Voltage (Test) 28 V —
Test Frequency 2.16 GHz —
Operating Frequency Range 2110 MHz to 2170 MHz (W-CDMA band) —
Output Power (Pout, CW or Avg) 38 W —
Power Gain 14 dB at 2.16 GHz 15.5 dB
Quiescent Current (Idq) at Test 1.6 A —
Current Rating (Datasheet Symbol) [DATA_NEEDED: continuous drain current] —
封裝 / 外殼 NI-1230 (5-pin ceramic flange-mount) NI-1230 (ceramic, bolt-down flange)
安裝類型 Chassis / Flange Mount (bolt-down) Chassis-mount, bolt-down flange with PCB lead
Operating Mode Class AB, single-ended or Doherty —
Modulation Support W-CDMA, TDMA, CDMA, multicarrier —
Lead Free / RoHS Lead Free (per distributor listings) —
Application — RF Power Amplifier (W-CDMA / LTE base station)
Frequency — 2.12 GHz (operating range 1930-2120 MHz)
Test Supply Voltage (Vdd) — 28 V
Voltage - Rated (Vds max) — 68 V
Output Power (Pout) — 44 W (CW, at 2.12 GHz)
Test Current (Idq) — 1.9 A
Drain Efficiency (typical) — 33 %
Supplier Device Package — NI-1230
工作溫度 — -40 C to +150 C (junction)
RoHS 狀態 — [DATA_NEEDED: RoHS status]
Lead-Free / Finish — Gold-plated leads (typical for NI-1230 family)
Polarity / Channel — N-Channel

資料表與資源

瀏覽所有產品 建立 BOM 索取報價