MRF5S19060MBR1 vs MRF5S19060NR1 比較
詳細並排比較 MRF5S19060MBR1 由 NXP Semiconductors 與 MRF5S19060NR1 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
NXP Semiconductors
MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale
MRF5S19060MBR1 Obsolete規格比較
| 參數 | MRF5S19060MBR1 | MRF5S19060NR1 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | RF Amplifiers | RF Transceivers |
| 生命週期狀態 | Obsolete | 啟用中 |
| 電晶體類型 | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power Field Effect Transistor | — |
| Frequency Band | 1.93 GHz to 1.99 GHz | — |
| Typical Operating Frequency | 1990 MHz | — |
| Drain-Source Voltage (Rated) | 65 V | 65 V |
| Nominal Drain Operating Voltage | 28 V | — |
| Output Power (Average) | 12 W | 12 W |
| Power Gain | 14 dB | — |
| Test Current (Drain) | 750 mA | — |
| Drain Current Rating (Leakage Spec) | 10 uA | — |
| VSWR Tolerance | 5:1 @ 28 Vdc, 1990 MHz, 12 W avg | — |
| Input Matching | Internally matched | — |
| ESD Protection | Integrated | — |
| 封裝 | TO-270 WB-4 (overmolded plastic, also listed as TO-272 WB-4) | — |
| Package Outline | Case 1486-03, Style 1 | — |
| 安裝方式 | Flange / surface mount with thermal pad | Surface Mount |
| Maximum Junction Temperature | 200 degree C | — |
| Packaging | Tape and Reel, 500 units per 44 mm 13-inch reel (R1 suffix) | — |
| Target Application | PCN/PCS 1900 MHz, 2 x N-CDMA base station PA final/driver stage | — |
| Frequency Range | — | 1930 MHz to 1990 MHz |
| Typical Gain | — | 14 dB at 1.99 GHz |
| Test Supply Voltage | — | 28 V |
| Test Quiescent Current | — | 750 mA |
| 封裝 / 外殼 | — | TO-270 WB-4 (over-molded plastic, 4-lead) |
| Configuration | — | Single, Common-Source |
| Application | — | Base station / broadband commercial amplifier |
| 腳位數 | — | 5 |
| RoHS 狀態 | — | Compliant |
| Lead Free Status | — | Lead Free |
| Operating Mode | — | Class AB (typical RF PA) |