MRF5S9101MBR1 vs MRF5S9101MR1 比較

詳細並排比較 MRF5S9101MBR1 由 NXP Semiconductors 與 MRF5S9101MR1 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MRF5S9101MBR1 MRF5S9101MBR1 - 100W 869-960MHz LDMOS RF MOSFET | NXP

MRF5S9101MBR1 - 100W 869-960MHz LDMOS RF MOSFET | NXP

MRF5S9101MBR1 Obsolete
NXP Semiconductors
MRF5S9101MR1 MRF5S9101MR1 - 100W 869-960MHz RF Power LDMOS | NXP

MRF5S9101MR1 - 100W 869-960MHz RF Power LDMOS | NXP

MRF5S9101MR1 Obsolete

規格比較

參數 MRF5S9101MBR1 MRF5S9101MR1
品牌 NXP Semiconductors NXP Semiconductors
類別 MOSFETs MOSFETs
生命週期狀態 Obsolete Obsolete
電晶體類型 LDMOS, N-Channel Enhancement-Mode Lateral MOSFET LDMOS (N-Channel Enhancement-Mode Lateral MOSFET)
Frequency Range 869 MHz to 960 MHz 869 MHz to 960 MHz
Test Frequency 960 MHz 960 MHz
Output Power (Pout) 100 W —
Power Gain (Gps) 17.5 dB (min, at 960 MHz, 26 V) —
Test Drain Voltage (Vdd) 26 V —
Test Drain Current (Idq) 700 mA —
Drain-Source Voltage Rating (Vdss) 68 V —
Configuration Single, Common Source —
封裝 / 外殼 TO-272 WB-4 (Case 1486-03, Style 1) TO-270 WB-4 (Case 1486-03, Style 1)
Supplier Device Package TO-272 WB-4 TO-270 WB-4
安裝類型 Surface Mount Chassis / Flange Mount (through-hole flange)
Maximum Power Dissipation 427 W —
工作溫度 -40C to +150C (TJ) [DATA_NEEDED: operating temperature range]
RoHS 狀態 [DATA_NEEDED: RoHS compliance status] Compliant (lead-free N-suffix variants)
Lead-Free / Terminal Finish Tin-Lead (per Partstack listing) —
Technology LDMOS (Laterally Diffused MOSFET) RF Power Field Effect Transistor
Application Target GSM / GSM EDGE Base Station Power Amplifiers —
Test Voltage — 26 V
Test Current (Quiescent) — 700 mA
Power Output (POUT) — 100 W (CW)
Power Gain — 17.5 dB at 960 MHz
Drain-Source Voltage (Rated) — 68 V
Drain Current Rating — [DATA_NEEDED: maximum continuous drain current]
Lead Free Status — Replaced by MRF5S9101NR1/NBR1 (form/fit/function equivalent)
Storage Temperature — [DATA_NEEDED: storage temperature range]
Thermal Resistance Junction-to-Case — [DATA_NEEDED: RθJC value]
Application — GSM / GSM EDGE / N-CDMA base station final-stage PA
Manufacturer — NXP Semiconductors (formerly Freescale Semiconductor)

資料表與資源

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