MRF6S18100NBR1 vs MRF6S27015GNR1 比較
詳細並排比較 MRF6S18100NBR1 由 NXP Semiconductors 與 MRF6S27015GNR1 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MRF6S18100NBR1 | MRF6S27015GNR1 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | Obsolete | 啟用中 |
| 電晶體類型 | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | — |
| Application | RF Power Amplifier (GSM/GSM EDGE base station) | — |
| Frequency Range | 1805 MHz to 1990 MHz | — |
| Test Frequency | 1.99 GHz | — |
| Drain-Source Voltage (V(BR)DSS) | 68 V | — |
| Test Supply Voltage (VDD) | 28 V | — |
| Test Drain Current | 900 mA | — |
| Output Power (Pout) | 100 W | — |
| Power Gain (Gps) | 14.5 dB (typical at 1.99 GHz) | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency %] | — |
| 封裝 / 外殼 | TO-272 WB-4 | — |
| Supplier Device Package | TO-272 WB-4 | — |
| 安裝類型 | Surface Mount / Flange Mount | Surface Mount (gull-wing leads) |
| Configuration | Single, common-source | Single-ended, common-source |
| RoHS 狀態 | Compliant (per NXP product page) | Compliant |
| Operating Mode | Class AB / Class C (per design) | — |
| Manufacturer | — | NXP Semiconductors |
| Part Type | — | RF Power MOSFET, N-Channel, Lateral |
| Technology | — | HV6 Lateral N-Channel Enhancement-Mode MOSFET |
| 封裝 | — | TO-270-2 (Case 1265-09, Style 1) Gull-Wing |
| Operating Frequency Range | — | 2300 MHz to 2700 MHz |
| Drain-Source Voltage (VDSS) | — | 68 V (max) |
| Operating Drain Voltage (Vdd) | — | 28 V (typical) |
| Output Power (Avg, W-CDMA) | — | 3 W |
| Power Gain (Typ, 2.6 GHz) | — | 14 dB |
| Test Quiescent Current (IDQ) | — | 160 mA |
| Drain Efficiency (Typ) | — | [DATA_NEEDED: drain efficiency %] |
| Channel Temperature (Tch) | — | [DATA_NEEDED: max channel temp C] |
| Thermal Resistance (Rth) | — | [DATA_NEEDED: junction-to-case thermal resistance C/W] |
| Target Waveform | — | Single-carrier W-CDMA, LTE, WiMAX |
| Lead-Free | — | Yes |
| MSL 等級 | — | [DATA_NEEDED: MSL rating] |