MRF6S18140HR5 vs MRF6S19140HR5 比較

詳細並排比較 MRF6S18140HR5 由 NXP Semiconductors 與 MRF6S19140HR5 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MRF6S18140HR5 MRF6S18140HR5 - 29W RF Power LDMOS Transistor | NXP Semiconductors

MRF6S18140HR5 - 29W RF Power LDMOS Transistor | NXP Semiconductors

MRF6S18140HR5 ✓ 啟用中
NXP Semiconductors
MRF6S19140HR5 MRF6S19140HR5 - 29W RF Power LDMOS, 1.93-1.99GHz | NXP

MRF6S19140HR5 - 29W RF Power LDMOS, 1.93-1.99GHz | NXP

MRF6S19140HR5 ✓ 啟用中

規格比較

參數 MRF6S18140HR5 MRF6S19140HR5
品牌 NXP Semiconductors NXP Semiconductors
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 LDMOS (RF Power MOSFET) N-Channel RF Power LDMOS
Technology LDMOS, N-Channel —
Frequency 1.88 GHz (test frequency) —
Test Voltage 28 V —
Test Current 1.2 A —
Power Gain 16 dB (typical at test condition) —
Output Power (P1dB) 29 W —
Voltage - Rated (Vdss max) 68 V —
Current Rating (leakage) 10 uA —
封裝 NI-880H-2L (ceramic flange mount) —
安裝類型 Chassis / Flange Mount Chassis / flange mount (bolt-down)
Configuration Single, internally input-matched —
Application N-CDMA, TDMA, CDMA, multicarrier amplifier base-station PA —
Operating Class Class AB —
Lead Free Status Lead Free / RoHS Compliant (per distributor listing) —
Manufacturer NXP USA Inc. (formerly Freescale Semiconductor) NXP Semiconductors (formerly Freescale)
Drain-Source Voltage (Vdss) — 68 V (max)
Operating Drain Voltage (typical) — 28 V
Pulsed Drain Current (Id) — 1.15 A
Output Power (Pout) — 29 W (CW or pulsed)
Operating Frequency — 1.93 GHz to 1.99 GHz
Small-Signal Gain — 16 dB (typical)
封裝 / 外殼 — NI-880H-2L ceramic flange
Process Technology — HV6 LDMOS
RoHS 狀態 — [DATA_NEEDED: RoHS status]
Lead-Free — [DATA_NEEDED: lead-free status]
工作溫度範圍 — [DATA_NEEDED: operating temp range]
Channel-to-Flange Thermal Resistance — 0.45 C/W (estimated, datasheet figure)

資料表與資源

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