MRF6S19100HR3 vs MRF8S19260HSR6 比較
詳細並排比較 MRF6S19100HR3 由 NXP Semiconductors 與 MRF8S19260HSR6 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
NXP Semiconductors
MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP
MRF6S19100HR3 ✓ 啟用中規格比較
| 參數 | MRF6S19100HR3 | MRF8S19260HSR6 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF6S19100HR3 | MRF8S19260HSR6 |
| Device Type | RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) | — |
| Technology | N-Channel LDMOS | — |
| Operating Frequency Range | 1930 MHz to 1990 MHz | — |
| Output Power (P1dB, Avg) | 22 W (N-CDMA Average) | — |
| Power Gain | 16.1 dB (typical at 1.99 GHz) | 18.2 dB at 1.99 GHz |
| Drain Voltage (Vds) | 28 V | — |
| Quiescent Drain Current (Idq) | 900 mA (typical) | — |
| 封裝 / 外殼 | NI-780H-2L (Case 465-06, Style 1) | NI-1230S-8 (ceramic air-cavity bolt-down) |
| 安裝類型 | Flanged / Screw-mount with ceramic body | Chassis / Flange Mount (through-hole RF bolt-down) |
| Lead Style | Dual blade (HR3 suffix) | — |
| Operating Mode | Class AB (linear) | Class AB and Class C capable |
| Target Applications | N-CDMA base station, TDMA, CDMA, multicarrier amplifier, PCS/cellular radio, WLL | — |
| RoHS 狀態 | Compliant (per NXP product page) | Compliant |
| 電晶體類型 | — | LDMOS, N-Channel, Dual |
| Frequency Band | — | 1930 MHz to 1990 MHz |
| Test Frequency | — | 1.99 GHz |
| Drain-Source Voltage (Max Rated) | — | 65 V |
| Operating Drain Voltage (Typical) | — | 30 V |
| Continuous Drain Current (Test) | — | 1.6 A |
| Output Power (CW / Avg) | — | 74 W average |
| Lead Free Status | — | Compliant (per DigiKey listing) |
| Application | — | W-CDMA, CDMA, multi-carrier cellular base station PA |