MRF6S19140HR5 vs MRF6S18140HR5 比較
詳細並排比較 MRF6S19140HR5 由 NXP Semiconductors 與 MRF6S18140HR5 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
NXP Semiconductors
MRF6S18140HR5 - 29W RF Power LDMOS Transistor | NXP Semiconductors
MRF6S18140HR5 ✓ 啟用中規格比較
| 參數 | MRF6S19140HR5 | MRF6S18140HR5 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP USA Inc. (formerly Freescale Semiconductor) |
| 電晶體類型 | N-Channel RF Power LDMOS | LDMOS (RF Power MOSFET) |
| Drain-Source Voltage (Vdss) | 68 V (max) | — |
| Operating Drain Voltage (typical) | 28 V | — |
| Pulsed Drain Current (Id) | 1.15 A | — |
| Output Power (Pout) | 29 W (CW or pulsed) | — |
| Operating Frequency | 1.93 GHz to 1.99 GHz | — |
| Small-Signal Gain | 16 dB (typical) | — |
| 封裝 / 外殼 | NI-880H-2L ceramic flange | — |
| 安裝類型 | Chassis / flange mount (bolt-down) | Chassis / Flange Mount |
| Process Technology | HV6 LDMOS | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | — |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| 工作溫度範圍 | [DATA_NEEDED: operating temp range] | — |
| Channel-to-Flange Thermal Resistance | 0.45 C/W (estimated, datasheet figure) | — |
| Technology | — | LDMOS, N-Channel |
| Frequency | — | 1.88 GHz (test frequency) |
| Test Voltage | — | 28 V |
| Test Current | — | 1.2 A |
| Power Gain | — | 16 dB (typical at test condition) |
| Output Power (P1dB) | — | 29 W |
| Voltage - Rated (Vdss max) | — | 68 V |
| Current Rating (leakage) | — | 10 uA |
| 封裝 | — | NI-880H-2L (ceramic flange mount) |
| Configuration | — | Single, internally input-matched |
| Application | — | N-CDMA, TDMA, CDMA, multicarrier amplifier base-station PA |
| Operating Class | — | Class AB |
| Lead Free Status | — | Lead Free / RoHS Compliant (per distributor listing) |