MRF6S21100HR3 vs MRF6S27085HR3 比較
詳細並排比較 MRF6S21100HR3 由 NXP Semiconductors 與 MRF6S27085HR3 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MRF6S21100HR3 | MRF6S27085HR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) | LDMOS, N-Channel, Enhancement-Mode, Lateral |
| Configuration | Single | — |
| Frequency Band | 2.11 GHz to 2.17 GHz | — |
| Output Power (Average) | 23 W (W-CDMA, CW equivalent ~100 W PEP) | — |
| Power Gain (Typ) | 15.9 dB at 2.14 GHz | 15.5 dB |
| Drain-Source Voltage Rating (VDS max) | 68 V | — |
| Test Supply Voltage (VDD) | 28 V | — |
| Quiescent Drain Current (IDQ) | 950 mA | — |
| Test Drain Current | 950 mA | — |
| 封裝 | NI-780H-2L (ceramic flange) | — |
| 安裝類型 | Surface Mount / bolt-down flange | Flange / Chassis mount with bolt-down thermal pad |
| Maximum Power Dissipation (Abs) | 388 W | — |
| Operating Mode | Class AB (PCN/PCS/cellular, WLL, TD-SCDMA) | — |
| Terminal Position | Dual | — |
| Lead Free Status | [DATA_NEEDED: RoHS/lead-free explicit statement] | — |
| RoHS 狀態 | [DATA_NEEDED: explicit RoHS compliance statement] | Compliant per Freescale/NXP material declaration |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Number | — | MRF6S27085HR3 |
| Application | — | RF Power Amplifier |
| Operating Frequency | — | 2600 MHz to 2700 MHz |
| Test Frequency | — | 2.66 GHz |
| Output Power (Average, P1dB-rated) | — | 20 W |
| Drain-Source Voltage Rating | — | 68 V |
| Operating Drain Voltage | — | 28 V |
| Quiescent Bias Current (Test) | — | 900 mA |
| 封裝 / 外殼 | — | NI-780H-2L (CASE 465-06, STYLE 1), ceramic flange mount |
| 腳位數 | — | 3 (Drain, Gate, Source) |
| Packaging | — | Tape & Reel (suffix HR3) |
| Technology | — | Lateral DMOS (LDMOS) |