MRF6VP3450HR6 vs MRF6VP3450HSR5 比較

詳細並排比較 MRF6VP3450HR6 由 NXP Semiconductors 與 MRF6VP3450HSR5 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MRF6VP3450HR6 MRF6VP3450HR6 - 860 MHz 450W RF Power MOSFET | NXP Semiconductors

MRF6VP3450HR6 - 860 MHz 450W RF Power MOSFET | NXP Semiconductors

MRF6VP3450HR6 ✓ 啟用中
NXP Semiconductors
MRF6VP3450HSR5 MRF6VP3450HSR5 - 450W RF Power LDMOS, 470-860 MHz | NXP

MRF6VP3450HSR5 - 450W RF Power LDMOS, 470-860 MHz | NXP

MRF6VP3450HSR5 ✓ 啟用中

規格比較

參數 MRF6VP3450HR6 MRF6VP3450HSR5
品牌 NXP Semiconductors NXP Semiconductors
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer NXP Semiconductors (formerly Freescale) NXP Semiconductors (formerly Freescale Semiconductor)
電晶體類型 LDMOS (N-Channel Enhancement-Mode Lateral) N-Channel Enhancement-Mode Lateral MOSFET (LDMOS)
Drain-Source Voltage (VDS) 50 V —
Rated Voltage 110 V —
Operating Frequency 470 MHz to 860 MHz —
Test Frequency 860 MHz 860 MHz
Output Power (Pout) 450 W (CW) 450 W (CW, broadband rating)
Test Power Output 90 W —
Power Gain (Gps) 22.5 dB at 860 MHz 22.5 dB typical
Drain Current (Test Id) 1.4 A —
封裝 / 外殼 NI-1230 (ceramic, bolt-down) NI-1230-4S (bolt-down ceramic chassis-mount)
Configuration Single, common-source amplifier Single, common-source
安裝類型 Chassis-mount, bolted flange Chassis Mount
Technology Lateral-Diffused MOS (LDMOS) LDMOS (Laterally Diffused MOS)
Application Broadcast TV transmitter final stage / broadband RF amplifier —
RoHS 狀態 [DATA_NEEDED: RoHS compliance status] [DATA_NEEDED: confirm from current manufacturer data]
Frequency Range — 470 MHz to 860 MHz
Drain-Source Voltage (Vds) Rated — 110 V minimum
Drain-Source Voltage (Vds) Test — 50 V
Continuous Drain Current (Id) — 1.4 A
Pulsed Output Power — 90 W (separate pulsed rating)
Supplier Device Package — NI-1230-4S
Operating Mode — Class AB (typical for UHF broadcast PAs)
Qualification — Not Qualified (per partstack listing)
Peak Reflow Time — 40 s maximum

資料表與資源

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