MRF8S21200HR6 vs MRF8HP21130HSR3 比較
詳細並排比較 MRF8S21200HR6 由 NXP Semiconductors 與 MRF8HP21130HSR3 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
NXP Semiconductors
MRF8S21200HR6 - 48W RF Power LDMOS MOSFET | NXP | LTE Base Station
MRF8S21200HR6 ✓ 啟用中規格比較
| 參數 | MRF8S21200HR6 | MRF8HP21130HSR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET | — |
| Frequency | 2.11 GHz to 2.17 GHz (2110-2170 MHz) | — |
| Test Voltage | 28 V | — |
| Test Current | 1.4 A | — |
| Power Gain | 18.1 dB | — |
| Output Power (Average) | 48 W | — |
| Drain-Source Voltage (Max) | 65 V | — |
| Configuration | Common Source, 2 elements | — |
| Case Connection | Source | — |
| 安裝類型 | Surface Mount (NI-1230 ceramic flange) | — |
| 封裝 | NI-1230 | — |
| Application | W-CDMA, LTE base station power amplifiers | — |
| Class of Operation | Class AB, Class C | — |
| Surface Mount | Yes | — |
| RoHS 狀態 | Compliant | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | — | MRF8HP21130HSR3 |
| Device Type | — | Lateral N-Channel RF Power MOSFET |
| Application Band | — | 2110 - 2170 MHz (W-CDMA / LTE) |
| Drain Voltage (VDD) | — | 28 V |
| Output Power (Average, W-CDMA / LTE) | — | 28 W |
| Power Gain (typ.) | — | 14 dB |
| Drain Current (test condition) | — | 360 mA |
| Operating Frequency (f) | — | 2.17 GHz (max in band) |
| Architecture | — | In-package Doherty (two-stage) |
| 封裝 / 外殼 | — | NI-780S-4 (air-cavity ceramic) |
| 安裝方式 | — | Flange mount, screw-down |
| Bias Class | — | Class AB / Class C capable |
| Modulation Support | — | W-CDMA, LTE |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| 工作溫度 | — | -40C to +150C (junction) |
| Datasheet Document | — | MRF8HP21130H datasheet (NXP) |