MT29F1G08ABAEAWP-IT:E vs MX30LF1GE8AB-TI-TR 比較
詳細並排比較 MT29F1G08ABAEAWP-IT:E 由 Micron Technology 與 MX30LF1GE8AB-TI-TR 由 Macronix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Macronix
MX30LF1GE8AB-TI-TR - 1Gbit 3V SLC NAND Flash, x8, TSOP-48 | Macronix
MX30LF1GE8AB-TI-TR ✓ 啟用中規格比較
| 參數 | MT29F1G08ABAEAWP-IT:E | MX30LF1GE8AB-TI-TR |
|---|---|---|
| 品牌 | Micron Technology | Macronix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體容量 | 1 Gbit (128 MB) | — |
| 組織 | 128M x 8 | — |
| 介面 | Parallel | — |
| 供應電壓 | 3.3 V | — |
| Access Time | 25 ns | — |
| Page Size | 2048 bytes + 64 bytes spare | 2112 bytes (2048 data + 64 spare) |
| Block Size | 128 KB | 64 pages (128 KB + 4 KB spare) |
| Program Time | 200 us (typical) | — |
| Erase Time | 2 ms (typical) | — |
| Endurance | 100K program/erase cycles | — |
| Data Retention | 10 years | 10 years (typical) |
| 工作溫度 | -40C to +85C | -40 C to +85 C (industrial) |
| 封裝 | TSOP-48 | 48-pin TSOP-I (Type I) |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | Compliant |
| 記憶體類型 | — | Non-Volatile NAND Flash (SLC) |
| Memory Organization | — | 128 M x 8 |
| Density | — | 1 Gbit (1024 Mbit) |
| 介面類型 | — | Parallel Asynchronous (ONFI 1.0) |
| Cell Technology | — | Single-Level Cell (SLC) |
| Number of Blocks | — | 1024 |
| Access Time (tR) | — | 20 ns / 25 ns (grade dependent) |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V |
| Active Read Current (ICC1) | — | 15 mA typical |
| Program / Erase Current (ICC2) | — | 15 mA typical |
| Program / Erase Endurance | — | 100 K cycles per block (typical) |
| ECC Architecture | — | ECC-Free (external host ECC required) |
| Compliance Standard | — | ONFI 1.0 |
| Bad Block Mark | — | 00h on 1st and 2nd page (per datasheet v1.3) |
| Bad Block Indicator | — | Marked at 1st and 2nd page (00h) per datasheet v1.3 |
| R/B# Power-On Delay | — | 100 us (per datasheet v1.3) |