MT29F1G08ABAEAWP-IT:E vs K9T1G08U0M-PIB0 比較
詳細並排比較 MT29F1G08ABAEAWP-IT:E 由 Micron Technology 與 K9T1G08U0M-PIB0 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MT29F1G08ABAEAWP-IT:E | K9T1G08U0M-PIB0 |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | NRND |
| 記憶體容量 | 1 Gbit (128 MB) | — |
| 組織 | 128M x 8 | 128M x 8 bit |
| 介面 | Parallel | Asynchronous NAND, 8-bit I/O bus |
| 供應電壓 | 3.3 V | — |
| Access Time | 25 ns | — |
| Page Size | 2048 bytes + 64 bytes spare | 2 Kbytes + 64 bytes spare area |
| Block Size | 128 KB | 128 Kbytes (64 pages per block) |
| Program Time | 200 us (typical) | — |
| Erase Time | 2 ms (typical) | — |
| Endurance | 100K program/erase cycles | — |
| Data Retention | 10 years | [DATA_NEEDED: data retention spec] |
| 工作溫度 | -40C to +85C | [DATA_NEEDED: industrial vs commercial grade] |
| 封裝 | TSOP-48 | 48-pin TSOP Type I (WSOP1) |
| 安裝類型 | Surface Mount | Surface Mount (TSOP) |
| RoHS 狀態 | Compliant | — |
| 記憶體類型 | — | Non-volatile NAND Flash (SLC) |
| Density | — | 1 Gbit (128 MB) |
| Cell Technology | — | SLC (Single-Level Cell) |
| VCC Supply Voltage | — | 2.7 V to 3.6 V |
| Pb-Free (Lead-Free) | — | Yes (PIB0 suffix indicates Pb-free) |
| RoHS Compliance | — | Compliant (Pb-free variant) |
| Endurance (P/E Cycles) | — | [DATA_NEEDED: typical P/E endurance spec] |
| Programming Time per Page | — | [DATA_NEEDED: typical tPROG] |
| Block Erase Time | — | [DATA_NEEDED: typical tBERS] |
| Command Set | — | Standard NAND (ONFI-compatible legacy commands) |